2EDL8123GXUMA1 vs 2ED21834S06JXUMA1 Comparison

Detailed side-by-side comparison of 2EDL8123GXUMA1 by Infineon and 2ED21834S06JXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2ED21834S06JXUMA1 2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 βœ“ Active

Specification Comparison

Parameter 2EDL8123GXUMA1 2ED21834S06JXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.89
Driver Configuration Half-Bridge (High-Side + Low-Side) β€”
Input Type Non-Inverting β€”
Number of Drivers 2 β€”
Maximum Bootstrap Voltage (V_BS) 120 V β€”
Source Current (I_source, typical) 3 A β€”
Sink Current (I_sink, typical) 4 A β€”
Supply Voltage (V_CC) [DATA_NEEDED: V_CC range] β€”
UVLO Protection Yes (V_CC and V_BS) β€”
Bootstrap Diode Integrated β€”
Isolation Type Junction-Isolated (JI) β€”
Operating Temperature -40 C to +125 C β€”
Package PG-VDSON-8-4 (VSON-8 with thermal pad) PG-DSO-14-49 (DSO-14)
Mounting Type Surface Mount Surface Mount
Propagation Delay [DATA_NEEDED: t_on / t_off] β€”
Logic Input Compatibility TTL/CMOS β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Product Type β€” Half-Bridge Gate Driver IC
Configuration β€” Half-bridge (high-side + low-side)
Maximum Offset Voltage (VBS) β€” 650 V
Typical Sink Current β€” 2.5 A
Typical Source Current β€” 2.5 A
Input Logic β€” Non-Inverting
Integrated Bootstrap Diode β€” Yes
Technology β€” SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) β€” Yes (VCC and VBS)
Number of Pins β€” 14
Operating Temperature Range β€” -40 Β°C to +125 Β°C
Standard Reel Quantity β€” 3000

Datasheets & Resources

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