2EDN7534RXTMA1 vs 1EDN7116GXTMA1 Comparison
Detailed side-by-side comparison of 2EDN7534RXTMA1 by Infineon and 1EDN7116GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDN7534RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon | PG-TSSOP-8
2EDN7534RXTMA1 β ActiveInfineon
1EDN7116GXTMA1
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β ActiveSpecification Comparison
| Parameter | 2EDN7534RXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.40 | $0.84 |
| Function | Low-side gate driver | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Number of Channels | 2 | β |
| Peak Output Current (source/sink) | 5 A / 5 A | β |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 5.5 V |
| Propagation Delay (typ) | 19 ns | β |
| Input Logic Compatibility | LV-TTL | β |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) | β |
| Output Configuration | Non-inverting | β |
| Output Resistance (Ron) | <1 ohm (typ) | β |
| Under-Voltage Lockout (UVLO) | Yes | β |
| Operating Temperature | -40C to +125C | β |
| Package | PG-TSSOP-8 | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | MSL3 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Driver Configuration | β | Non-inverting, single low-side |
| Number of Drivers | β | 1 |
| Peak Source Current | β | 2 A (typ) |
| Peak Sink Current | β | 4 A (typ) |
| Input Type | β | Truly Differential Input (TDI) |
| Switch-Node Blocking Voltage | β | 200 V (max) |
| Propagation Delay (Typ) | β | 9 ns |
| Rise Time (Typ) | β | 3 ns |
| Fall Time (Typ) | β | 3 ns |
| Quiescent Current (Typ) | β | 0.6 mA |
| Miller Clamp | β | Integrated, active |
| UVLO | β | Yes (VCC and gate-rail monitored) |
| Operating Temperature Range | β | -40 Β°C to +125 Β°C |
| Target Switch Technology | β | GaN HEMT (CoolGaN) or Si MOSFET |