2EDN7534RXTMA1 vs 1EDN7116GXTMA1 Vergleich
Detaillierter Direktvergleich von 2EDN7534RXTMA1 von Infineon und 1EDN7116GXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
2EDN7534RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon | PG-TSSOP-8
2EDN7534RXTMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | 2EDN7534RXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,40 | $0,84 |
| Funktion | Low-side gate driver | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Number of Channels | 2 | — |
| Peak Output Current (source/sink) | 5 A / 5 A | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 5.5 V |
| Propagation Delay (typ) | 19 ns | — |
| Input Logic Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) | — |
| Ausgangskonfiguration | Non-inverting | — |
| Output Resistance (Ron) | <1 ohm (typ) | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| Betriebstemperatur | -40C to +125C | — |
| Gehäuse | PG-TSSOP-8 | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | MSL3 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| Betriebstemperaturbereich | — | -40 °C to +125 °C |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |