2EDN7534RXTMA1 vs 1EDN7116GXTMA1 对比
详细并排对比 2EDN7534RXTMA1 出自 Infineon 和 1EDN7116GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2EDN7534RXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.40 | $0.84 |
| 功能 | Low-side gate driver | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Number of Channels | 2 | — |
| Peak Output Current (source/sink) | 5 A / 5 A | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 5.5 V |
| Propagation Delay (typ) | 19 ns | — |
| Input Logic Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) | — |
| 输出配置 | Non-inverting | — |
| Output Resistance (Ron) | <1 ohm (typ) | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| 工作温度 | -40C to +125C | — |
| 封装 | PG-TSSOP-8 | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (unlimited) | MSL3 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| 工作温度范围 | — | -40 °C to +125 °C |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |