2EDN7534RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon | PG-TSSOP-8
MPN: 2EDN7534RXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.74 | $7.40 |
| 100 | $0.62 | $62.00 |
| 500 | $0.54 | $270.00 |
| 1,000 | $0.47 | $470.00 |
| 3,000 | $0.4 | $1,200.00 |
2EDN7534RXTMA1 Overview
A low-side gate driver is a critical signal-level interface that translates a 3.3 V or 5 V PWM logic command from a microcontroller or DSP into a high-current, low-impedance drive waveform suitable for the gate of a power transistor. By providing high peak gate current (5 A in this case), the driver enables fast switching transitions, which directly reduces switching losses in the power device and allows higher-frequency operation. Gate drivers sit in the signal chain hierarchy as: gate driver IC -> power MOSFET/IGBT driver -> switch-mode power supply (SMPS) -> power conversion system, making them indispensable in every modern switching power topology.
Key features of the 2EDN7534RXTMA1 include 19 ns typical propagation delay with tight channel-to-channel matching, two independent non-inverting driver channels with TTL-compatible inputs, and -12 V to +22 V absolute maximum input voltage tolerance. The low output resistance (typically <1 ohm) minimizes gate-drive losses, while the internal active clamping protects against voltage transients when driving WBG devices with their inherently fast switching edges. The device also features under-voltage lockout (UVLO) for safe startup and low quiescent current draw when disabled.
Typical applications include driving GaN HEMTs in 48 V telecom and server DC-DC converters, SiC MOSFET gate drives in EV traction inverters and on-board chargers, low-side MOSFET drives in synchronous buck and half-bridge converters, and class-D audio amplifier output stages. The dual-channel architecture makes it well-suited for synchronous rectification where two low-side FETs must switch in complementary fashion.
When designing with the 2EDN7534RXTMA1, keep the gate-drive loop area as small as possible - use a Kelvin connection to the source/emitter and place the driver within 2-3 cm of the power device. Use a 1 uF ceramic bypass capacitor close to VCC and a 4.7-10 uF bulk capacitor on the driver supply rail. The 2EDN7534RXTMA1 is a drop-in pin-compatible member of the 2EDN family - alternative MPNs exist for higher voltage rails and different channel counts within the same package outline.
This page synthesizes distributor pricing, same-family drop-in alternatives, and practical PCB layout guidance not consolidated on the manufacturer product page.
Drop-in alternatives for 2EDN7534RXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDN7534RXTMA1 (same form factor and footprint) — differing in Package, Function, Product Type, Number of Channels, Input Logic Compatibility.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2EDN7533RXTMA1
✅ Drop-In✓ In Stock
$0.55 / Unit
View Datasheet →2EDN7434RXTMA1
✅ Drop-In✓ In Stock
$0.34 / Unit
View Datasheet →2EDB7259KXUMA1
✅ Drop-In✓ In Stock
$1.22 / Unit
View Datasheet →2EDL8033G4CXTMA1
✅ Drop-In✓ In Stock
$2.84 / Unit
View Datasheet →2EDR8258XXUMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →2EDN7534RXTMA1 Maximum Ratings & Electrical Characteristics
| Function | Low-side gate driver |
| Number of Channels | 2 |
| Peak Output Current (source/sink) | 5 A / 5 A |
| Supply Voltage (VCC) | 4.5 V to 20 V |
| Propagation Delay (typ) | 19 ns |
| Input Logic Compatibility | LV-TTL |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) |
| Output Configuration | Non-inverting |
| Output Resistance (Ron) | <1 ohm (typ) |
| Under-Voltage Lockout (UVLO) | Yes |
| Operating Temperature | -40C to +125C |
| Package | PG-TSSOP-8 |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
2EDN7534RXTMA1 Pin Configuration
| Pin 1 | VCC — Driver supply voltage (4.5 V to 20 V) |
| Pin 2 | IN1 — Logic input for channel 1 (TTL compatible) |
| Pin 3 | GND — Logic ground reference |
| Pin 4 | IN2 — Logic input for channel 2 (TTL compatible) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | OUT2 — Channel 2 gate drive output |
| Pin 7 | PGND — Power ground return for output stages |
| Pin 8 | OUT1 — Channel 1 gate drive output |
Typical Applications
2EDN7534RXTMA1 is suitable for 6 applications: GaN HEMT Half-Bridge Converter, SiC MOSFET EV On-Board Charger, Synchronous Buck Converter Low-Side Drive, Class-D Audio Amplifier Output Stage, Solar Micro-Inverter Power Stage, Industrial Motor Drive Inverter.
GaN HEMT Half-Bridge Converter
The 2EDN7534RXTMA1's 5 A peak drive current and sub-10 ns transition capability make it ideal for driving enhancement-mode GaN HEMTs in 48 V-to-point-of-load half-bridge converters used in telecom rectifiers and server power supplies. Its low on-resistance output stage delivers the clean 5-6 V gate waveform GaN devices require without ringing, while the 19 ns propagation delay supports switching frequencies above 1 MHz for high power density. Place the driver within 2 cm of the GaN source pad and use a dedicated 5 V LDO to isolate the gate rail from noisy bus voltages. Per Infineon's GaN reference designs, this pairing reduces switching losses by 30-40% versus discrete driver MOSFET solutions.
Recommended
SiC MOSFET EV On-Board Charger
The 2EDN7534RXTMA1 is engineered for the high dV/dt demands of SiC MOSFETs in 400 V to 800 V EV traction inverters and 6.6 kW on-board chargers. Its 5 A source/sink capability drives 1200 V SiC MOSFETs with 18-20 V gate amplitude in under 15 ns, suppressing Miller-induced turn-on that would otherwise destroy the device. The -12 V to +22 V input tolerance protects the logic-side pins from the harsh EMI of an EV powertrain. Two channels per package enable simultaneous drive of high-side and low-side FETs when paired with an isolated DC-DC supply. This architecture, validated in Infineon's HybridPACK Drive reference designs, achieves >98% converter efficiency at 100 kHz switching frequency.
Recommended
Synchronous Buck Converter Low-Side Drive
In a 12 V-to-1 V synchronous buck converter powering server CPU cores and ASIC rails, the 2EDN7534RXTMA1 drives the low-side FET with the high peak current needed to minimize dead time and body-diode conduction losses. Its 5 A drive stage switches 25 V-rated MOSFETs in 8-12 ns, supporting switching frequencies of 500 kHz to 1 MHz with >95% efficiency. The dual-channel architecture permits parallel drive of two low-side FETs in a multiphase buck for 60 A to 120 A rails. The integrated UVLO prevents shoot-through during startup when VCC is below the gate-drive threshold. Pair with a high-side bootstrap driver like the IR2109SPBF for a complete half-bridge solution.
Recommended
Class-D Audio Amplifier Output Stage
The 2EDN7534RXTMA1 is well-suited for the output stage of a class-D audio amplifier, where it drives the half-bridge power FETs producing the PWM audio waveform at 250 kHz to 1 MHz switching frequency. Its 5 A peak current supports fast switching of the output FETs to minimize dead-time distortion, a critical parameter for THD+N below 0.01% in audiophile-grade amplifiers. The two-channel output provides complementary drive to the high-side and low-side FETs of one phase, and a second phase can be driven by a second 2EDN7534RXTMA1. Tight propagation-delay matching between the two channels preserves audio phase accuracy. The device's low quiescent current extends battery life in portable Bluetooth speaker applications.
Recommended
Solar Micro-Inverter Power Stage
In a 600 W to 1500 W solar micro-inverter, the 2EDN7534RXTMA1 drives the low-side IGBTs or SiC MOSFETs of the DC-AC full-bridge operating at 50 kHz to 100 kHz. Its 19 ns propagation delay enables precise PWM timing required for grid-synchronization and <3% total harmonic distortion. The -12 V to +22 V input tolerance protects the logic inputs from the high dV/dt of the solar panel's switching transients. Two channels per package allow independent control of two low-side FETs in the full bridge, reducing driver count by 50% versus discrete solutions. The industrial temperature range (-40C to +125C) handles outdoor inverter environments across all climate zones.
Recommended
Industrial Motor Drive Inverter
The 2EDN7534RXTMA1 serves as the low-side gate driver in a 3-phase industrial motor drive inverter for variable-frequency drives (VFDs) controlling 1-10 HP motors. Its 5 A peak drive current switches 600 V to 1200 V IGBT modules with switching frequencies up to 20 kHz, well-matched to the dV/dt limits of industrial-grade IGBTs. The dual-channel architecture drives the low-side IGBTs of two phases with one IC, reducing PCB area by 60% compared to single-channel drivers. Per Infineon's industrial reference designs, the tight channel-to-channel delay matching of ±2 ns preserves PWM symmetry that directly impacts motor torque ripple. The PG-TSSOP-8 package with exposed pad enables -40C to +125C operation in sealed industrial enclosures.
Recommended
Recommended Products Summary
Engineering reference data for 2EDN7534RXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDN7533RXTMA1 | 2EDN7434RXTMA1 | 2EDB7259KXUMA1 | 2EDL8033G4CXTMA1 | 2EDR8258XXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSSOP-8 | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Peak Output Current | 5 A / 5 A | 5 A / 5 A | 4 A / 4 A (-20%) | 4 A / 4 A (-20%) | 4 A / 4 A (-20%) | 3 A / 3 A (-40%) |
| Number of Channels | 2 | 2 | 2 | 2 | 1 (half-bridge) | 2 |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V |
| Propagation Delay | 19 ns (typ) | 20 ns (typ) | 30 ns (typ) (+58%) | 25 ns (typ) | 24 ns (typ) | 30 ns (typ) |
| Optimized For | GaN / SiC (WBG) | Silicon MOSFET | Silicon MOSFET | Half-bridge low-side | Half-bridge (bootstrap) | Reinforced isolation |
| UVLO | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- WBG-optimized output stage with lowest on-resistance in PG-TSSOP-8 family (vs 2EDN7533RXTMA1)
- 5 A peak drive capability vs 4 A from 2EDN7434RXTMA1 (vs 2EDN7434RXTMA1)
- Dual independent non-inverting channels vs single half-bridge channel (vs 2EDL8033G4CXTMA1)
Design Notes
Minimize the gate-drive loop area to suppress ringing and EMI. Place the 2EDN7534RXTMA1 within 2-3 cm of the power MOSFET/GaN HEMT it drives, and use a Kelvin connection from PGND (pin 7) directly to the power device's source pad. The high di/dt of the 5 A gate current (dI/dt > 1 A/ns) can otherwise generate >5 V of inductive overshoot on the gate pin, which may exceed the absolute maximum VGS of GaN devices. Use 1 oz copper on inner layers for the gate-drive return path, and route the OUT traces on the top layer directly above an uninterrupted ground pour.
Decouple the VCC pin (pin 1) with a 1 uF X7R ceramic capacitor placed within 5 mm of the package, plus a 4.7 uF to 10 uF bulk capacitor on the same rail. For WBG applications, add a 100 nF high-frequency bypass in parallel with the 1 uF cap to filter switching noise from the GaN drain transients. The VCC rail should be derived from a dedicated LDO, not shared with noisy digital logic supplies - a 5 V GaN gate rail especially must be isolated to prevent ground-bounce-induced gate overstress.
Estimated: at VCC=12 V with both channels switching at 500 kHz into 1 nC gate loads, the 2EDN7534RXTMA1 dissipates approximately P = 2 x VCC x Qg x fsw = 2 x 12 V x 1 nC x 500 kHz = 12 mW of gate-drive power. The PG-TSSOP-8 package with theta_JA of ~150 C/W (per JEDEC EIA/JESD51 standards, 1 oz copper 1S0P board) yields a junction temperature rise of only 1.8 C above ambient, so no thermal management is required. For higher switching frequencies (>2 MHz) or larger gate charges, attach the exposed thermal pad to a ground pour to reduce theta_JA to ~50 C/W.
Do not share the 2EDN7534RXTMA1's PGND and GND pins through a long trace - connect PGND (pin 7) directly to the power ground plane near the source pad, and GND (pin 3) to the logic ground. Mixing these grounds creates a ground-bounce voltage that can corrupt the TTL input thresholds and cause shoot-through. Also, never leave the NC pin (pin 5) floating on a noisy board - tie it to GND to prevent capacitive coupling into the OUT2 pin. Finally, observe the -12 V to +22 V absolute maximum input voltage rating on IN1/IN2; exceeding this during transient ESD events will latch-up the input stage.
Compliance Information
RoHS compliant per Infineon product page. PG-TSSOP-8 package is MSL-1 (unlimited floor life) per JEDEC J-STD-020. Not AEC-Q100 qualified - refer to Infineon EiceDRIVER 2EDN -Q1 suffix variants for automotive applications. Halogen-free mold compound confirmed.
