2EDN7534RXTMA1 vs 1EDN7116GXTMA1 Comparación
Comparación detallada lado a lado de 2EDN7534RXTMA1 por Infineon y 1EDN7116GXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
2EDN7534RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon | PG-TSSOP-8
2EDN7534RXTMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | 2EDN7534RXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,40 | $0,84 |
| Función | Low-side gate driver | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Number of Channels | 2 | — |
| Peak Output Current (source/sink) | 5 A / 5 A | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 5.5 V |
| Propagation Delay (typ) | 19 ns | — |
| Input Logic Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) | — |
| Configuración de salida | Non-inverting | — |
| Output Resistance (Ron) | <1 ohm (typ) | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| Temperatura de funcionamiento | -40C to +125C | — |
| Encapsulado | PG-TSSOP-8 | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (unlimited) | MSL3 |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| Rango de temperatura de funcionamiento | — | -40 °C to +125 °C |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |