2N7002L vs 2N7002LT1G Comparison

Detailed side-by-side comparison of 2N7002L by onsemi and 2N7002LT1G by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2N7002L 2N7002LT1G
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.03 $0.02
Transistor Type N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) —
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V —
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET MOSFET
Mounting Type Surface Mount Surface Mount
Package SOT-23 (SOT-23-3) SOT-23-3 (TO-236)
Configuration Single FET Single FET
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi onsemi (ON Semiconductor)
RoHS Status [DATA_NEEDED: RoHS status] —
Polarity — N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Number of Pins — 3
Category — Small Signal MOSFET
Lead Finish — [DATA_NEEDED: lead finish/plating]
Operating Temperature Range — [DATA_NEEDED: operating temperature range]
Packaging — [DATA_NEEDED: packaging type]

Datasheets & Resources

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