2N7002L vs 2N7002LT1G Comparación
Comparación detallada lado a lado de 2N7002L por onsemi y 2N7002LT1G por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2N7002L | 2N7002LT1G |
|---|---|---|
| Marca | onsemi | onsemi |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,03 | $0,02 |
| Tipo de transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 115 mA (Ta) | — |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | — |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | — |
| Technology | High cell density trench MOSFET | MOSFET |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado | SOT-23 (SOT-23-3) | SOT-23-3 (TO-236) |
| Configuration | Single FET | Single FET |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | onsemi (ON Semiconductor) |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Polarity | — | N-Channel |
| Channel Mode | — | Enhancement Mode |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Número de pines | — | 3 |
| Categoría | — | Small Signal MOSFET |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | [DATA_NEEDED: packaging type] |