2N7002L vs 2N7002LT1G Vergleich
Detaillierter Direktvergleich von 2N7002L von onsemi und 2N7002LT1G von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002L | 2N7002LT1G |
|---|---|---|
| Marke | onsemi | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,03 | $0,02 |
| Transistortyp | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 115 mA (Ta) | — |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | — |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | — |
| Technology | High cell density trench MOSFET | MOSFET |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | SOT-23 (SOT-23-3) | SOT-23-3 (TO-236) |
| Configuration | Single FET | Single FET |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | onsemi (ON Semiconductor) |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| Polarity | — | N-Channel |
| Channel Mode | — | Enhancement Mode |
| Drain-Source Voltage VDSS | — | 60 V |
| Continuous Drain Current ID | — | 115 mA (Tc) |
| Power Dissipation PD | — | 225 mW (Ta) |
| Maximum RDS(on) | — | 7.5 ohm @ VGS = 5 V |
| Anzahl der Pins | — | 3 |
| Kategorie | — | Small Signal MOSFET |
| Lead Finish | — | [DATA_NEEDED: lead finish/plating] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | [DATA_NEEDED: packaging type] |