2N7002L vs BSS138LT1G Comparison

Detailed side-by-side comparison of 2N7002L by onsemi and BSS138LT1G by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2N7002L BSS138LT1G
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.03 $0.08
Transistor Type N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 50 V
Continuous Drain Current (ID) 115 mA (Ta) 200 mA (Ta)
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V [DATA_NEEDED: gate threshold voltage]
Power Dissipation (PD) 200 mW (Ta), 225 mW max 225 mW (Ta)
Technology High cell density trench MOSFET —
Mounting Type Surface Mount Surface Mount
Package SOT-23 (SOT-23-3) SOT-23-3 (TO-236)
Configuration Single FET Single FET
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting Computers, printers, cordless phones, DC-DC converters
Manufacturer onsemi —
RoHS Status [DATA_NEEDED: RoHS status] Compliant (RoHS Compliant and Pb-free per Easybom)
On-Resistance Max (RDS(on)) — 3.5 ohm
Gate-Source Voltage Max (VGS) — [DATA_NEEDED: maximum gate-source voltage]
Channel Mode — Enhancement Mode
Operating Temperature — [DATA_NEEDED: operating temperature range]
Product Family — BSS138LT Series Small Signal MOSFET

Datasheets & Resources

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