AFT26P100-4WSR3 vs MRF8P26080HSR3 Comparison

Detailed side-by-side comparison of AFT26P100-4WSR3 by NXP Semiconductors and MRF8P26080HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
AFT26P100-4WSR3 AFT26P100-4WSR3 - 22W 2.6GHz Doherty RF LDMOS | NXP

AFT26P100-4WSR3 - 22W 2.6GHz Doherty RF LDMOS | NXP

AFT26P100-4WSR3 ✓ Active
NXP Semiconductors
MRF8P26080HSR3 MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 ✓ Active

Specification Comparison

Parameter AFT26P100-4WSR3 MRF8P26080HSR3
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $88.81 $99.85
Manufacturer NXP Semiconductors (formerly Freescale) —
Product Family Airfast RF Power LDMOS —
Transistor Type N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual) N-Channel Enhancement-Mode Lateral MOSFET
Configuration Symmetrical Doherty, Dual-section —
Frequency Range 2496 MHz to 2690 MHz 2500 MHz to 2700 MHz
Test Frequency 2.69 GHz —
Drain Voltage (Vds) 28 V (typical), 65 V (maximum rating) —
Average Output Power 22 W (Doherty) —
Power Gain 15.1 dB (typical at 200 mA) —
Test Quiescent Current (Idq) 200 mA —
Package NI-780S-4 (NI-780S-6 variant), ceramic air-cavity NI-780S-4 (ceramic, flange-mount, air-cavity)
Mounting Type Surface Mount / Chassis Mount (bolt-down) Through-hole flange-mount with screw attachment
Technology LDMOS, lateral diffused Gen8 LDMOS (Silicon, Lateral)
Operating Mode Class AB / Doherty —
Polarity N-Channel —
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status [DATA_NEEDED: RoHS status] —
Lead-Free [DATA_NEEDED: lead-free status] —
Average Output Power (P3dB) — 14 W (W-CDMA, single-carrier)
Peak Output Power (CW) — 80 W
Drain-Source Voltage (VDSS max) — 65 V
Operating Drain Voltage (VDD) — 28 V nominal
Test Mode — Typical Doherty Single-Carrier W-CDMA
Application Class — Class AB or Class C capable
Modulation Formats — W-CDMA, LTE, OFDM, multi-carrier
Lead Finish — Gold-plated (NiPdAu)
Lead-Free / RoHS — Compliant
Operating Temperature Range — -40C to +150C (junction)

Datasheets & Resources

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