AFT26P100-4WSR3 vs MRF8P26080HSR3 Vergleich
Detaillierter Direktvergleich von AFT26P100-4WSR3 von NXP Semiconductors und MRF8P26080HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ AktivSpezifikationsvergleich
| Parameter | AFT26P100-4WSR3 | MRF8P26080HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $88,81 | $99,85 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Product Family | Airfast RF Power LDMOS | — |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual) | N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Symmetrical Doherty, Dual-section | — |
| Frequency Range | 2496 MHz to 2690 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.69 GHz | — |
| Drain Voltage (Vds) | 28 V (typical), 65 V (maximum rating) | — |
| Average Output Power | 22 W (Doherty) | — |
| Power Gain | 15.1 dB (typical at 200 mA) | — |
| Test Quiescent Current (Idq) | 200 mA | — |
| Gehäuse | NI-780S-4 (NI-780S-6 variant), ceramic air-cavity | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Montageart | Surface Mount / Chassis Mount (bolt-down) | Through-hole flange-mount with screw attachment |
| Technology | LDMOS, lateral diffused | Gen8 LDMOS (Silicon, Lateral) |
| Operating Mode | Class AB / Doherty | — |
| Polarity | N-Channel | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| Betriebstemperaturbereich | — | -40C to +150C (junction) |