AFT26P100-4WSR3 vs MRF8P26080HSR3 Comparaison
Comparaison détaillée côte à côte de AFT26P100-4WSR3 par NXP Semiconductors et MRF8P26080HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ ActifComparaison des spécifications
| Paramètre | AFT26P100-4WSR3 | MRF8P26080HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $88,81 | $99,85 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Product Family | Airfast RF Power LDMOS | — |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual) | N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Symmetrical Doherty, Dual-section | — |
| Frequency Range | 2496 MHz to 2690 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.69 GHz | — |
| Drain Voltage (Vds) | 28 V (typical), 65 V (maximum rating) | — |
| Average Output Power | 22 W (Doherty) | — |
| Power Gain | 15.1 dB (typical at 200 mA) | — |
| Test Quiescent Current (Idq) | 200 mA | — |
| Boîtier | NI-780S-4 (NI-780S-6 variant), ceramic air-cavity | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Type de montage | Surface Mount / Chassis Mount (bolt-down) | Through-hole flange-mount with screw attachment |
| Technology | LDMOS, lateral diffused | Gen8 LDMOS (Silicon, Lateral) |
| Operating Mode | Class AB / Doherty | — |
| Polarity | N-Channel | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| Plage de température de fonctionnement | — | -40C to +150C (junction) |