AFT26P100-4WSR3 vs MRF8P26080HSR3 Comparação
Comparação detalhada lado a lado de AFT26P100-4WSR3 por NXP Semiconductors e MRF8P26080HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ AtivoComparação de especificações
| Parâmetro | AFT26P100-4WSR3 | MRF8P26080HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $88,81 | $99,85 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Product Family | Airfast RF Power LDMOS | — |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual) | N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Symmetrical Doherty, Dual-section | — |
| Frequency Range | 2496 MHz to 2690 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.69 GHz | — |
| Drain Voltage (Vds) | 28 V (typical), 65 V (maximum rating) | — |
| Average Output Power | 22 W (Doherty) | — |
| Power Gain | 15.1 dB (typical at 200 mA) | — |
| Test Quiescent Current (Idq) | 200 mA | — |
| Encapsulamento | NI-780S-4 (NI-780S-6 variant), ceramic air-cavity | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Tipo de montagem | Surface Mount / Chassis Mount (bolt-down) | Through-hole flange-mount with screw attachment |
| Technology | LDMOS, lateral diffused | Gen8 LDMOS (Silicon, Lateral) |
| Operating Mode | Class AB / Doherty | — |
| Polarity | N-Channel | — |
| Nível MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| Faixa de temperatura de operação | — | -40C to +150C (junction) |