AFT26P100-4WSR3 vs MRF8P26080HSR3 Сравнение

Подробное сравнение бок о бок AFT26P100-4WSR3 от NXP Semiconductors и MRF8P26080HSR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

NXP Semiconductors
AFT26P100-4WSR3 AFT26P100-4WSR3 - 22W 2.6GHz Doherty RF LDMOS | NXP

AFT26P100-4WSR3 - 22W 2.6GHz Doherty RF LDMOS | NXP

AFT26P100-4WSR3 ✓ Активен
NXP Semiconductors
MRF8P26080HSR3 MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 ✓ Активен

Сравнение характеристик

Параметр AFT26P100-4WSR3 MRF8P26080HSR3
Бренд NXP Semiconductors NXP Semiconductors
Категория MOSFETs MOSFETs
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $88,81 $99,85
Manufacturer NXP Semiconductors (formerly Freescale) —
Product Family Airfast RF Power LDMOS —
Тип транзистора N-Channel Enhancement-Mode Lateral MOSFET (LDMOS, Dual) N-Channel Enhancement-Mode Lateral MOSFET
Configuration Symmetrical Doherty, Dual-section —
Frequency Range 2496 MHz to 2690 MHz 2500 MHz to 2700 MHz
Test Frequency 2.69 GHz —
Drain Voltage (Vds) 28 V (typical), 65 V (maximum rating) —
Average Output Power 22 W (Doherty) —
Power Gain 15.1 dB (typical at 200 mA) —
Test Quiescent Current (Idq) 200 mA —
Корпус NI-780S-4 (NI-780S-6 variant), ceramic air-cavity NI-780S-4 (ceramic, flange-mount, air-cavity)
Тип монтажа Surface Mount / Chassis Mount (bolt-down) Through-hole flange-mount with screw attachment
Technology LDMOS, lateral diffused Gen8 LDMOS (Silicon, Lateral)
Operating Mode Class AB / Doherty —
Polarity N-Channel —
Уровень MSL [DATA_NEEDED: MSL rating] —
Статус RoHS [DATA_NEEDED: RoHS status] —
Lead-Free [DATA_NEEDED: lead-free status] —
Average Output Power (P3dB) — 14 W (W-CDMA, single-carrier)
Peak Output Power (CW) — 80 W
Drain-Source Voltage (VDSS max) — 65 V
Operating Drain Voltage (VDD) — 28 V nominal
Test Mode — Typical Doherty Single-Carrier W-CDMA
Application Class — Class AB or Class C capable
Modulation Formats — W-CDMA, LTE, OFDM, multi-carrier
Lead Finish — Gold-plated (NiPdAu)
Lead-Free / RoHS — Compliant
Диапазон рабочих температур — -40C to +150C (junction)

Даташиты & ресурсы

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