BAT42-TAP vs BAT43 Comparison
Detailed side-by-side comparison of BAT42-TAP by Vishay Intertechnology and BAT43 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Vishay Intertechnology
BAT42-TAP
BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay
BAT42-TAP β ActiveSTMicroelectronics
BAT43
BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics
BAT43 β ActiveSpecification Comparison
| Parameter | BAT42-TAP | BAT43 |
|---|---|---|
| Brand | Vishay Intertechnology | STMicroelectronics |
| Category | Diodes | Diodes |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.04 | $0.08 |
| Diode Type | Small-Signal Schottky Barrier | β |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | 30 V |
| Average Forward Current (IF(AV)) | 200 mA | β |
| Non-Repetitive Surge Current (IFSM) | 4.0 A | 4 A (tp = 10 ms) |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | β |
| Reverse Recovery | Fast switching (Schottky, no stored charge) | β |
| Junction Capacitance | [DATA_NEEDED: diode capacitance] | β |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | β |
| Package | DO-204AH (DO-35) glass axial | DO-35 (glass axial, through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Termination Style | Axial Leads | β |
| Packaging Suffix | -TAP (Ammo tape packing) | β |
| Configuration | Single Diode | Single diode |
| Protection Feature | PN junction guard ring against ESD / excessive voltage | β |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| AEC-Q101 Option | Qualified version available on request | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Mounting Technology | Wave solder / hand solder | β |
| Device Type | β | Small Signal Schottky Diode |
| Forward Continuous Current (IF) | β | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | β | 500 mA (tp <= 1 s, delta <= 0.5) |
| Power Dissipation (Ptot) | β | 200 mW at Tl = 65 C |
| Technology | β | Metal-to-silicon Schottky barrier |
| ESD Protection | β | Integrated guard ring against excessive voltage |
| Forward Voltage | β | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | β | [DATA_NEEDED: reverse leakage current] |
| Case Style | β | Hermetically sealed glass body |