BAT42-TAP vs BAT43 Сравнение

Подробное сравнение бок о бок BAT42-TAP от Vishay Intertechnology и BAT43 от STMicroelectronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

Vishay Intertechnology
BAT42-TAP BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP ✓ Активен
STMicroelectronics
BAT43 BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 ✓ Активен

Сравнение характеристик

Параметр BAT42-TAP BAT43
Бренд Vishay Intertechnology STMicroelectronics
Категория Diodes Diodes
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $0,04 $0,08
Diode Type Small-Signal Schottky Barrier —
Repetitive Peak Reverse Voltage (VRRM) 30 V 30 V
Average Forward Current (IF(AV)) 200 mA —
Non-Repetitive Surge Current (IFSM) 4.0 A 4 A (tp = 10 ms)
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Reverse Recovery Fast switching (Schottky, no stored charge) —
Junction Capacitance [DATA_NEEDED: diode capacitance] —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage at rated VR] —
Корпус DO-204AH (DO-35) glass axial DO-35 (glass axial, through-hole)
Тип монтажа Through Hole Through Hole
Termination Style Axial Leads —
Packaging Suffix -TAP (Ammo tape packing) —
Configuration Single Diode Single diode
Protection Feature PN junction guard ring against ESD / excessive voltage —
Рабочая температура [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
AEC-Q101 Option Qualified version available on request —
Статус RoHS Compliant [DATA_NEEDED: RoHS status]
Mounting Technology Wave solder / hand solder —
Device Type — Small Signal Schottky Diode
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Рассеиваемая мощность (Ptot) — 200 mW at Tl = 65 C
Technology — Metal-to-silicon Schottky barrier
ESD Protection — Integrated guard ring against excessive voltage
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body

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