BAT42-TAP vs BAT43 비교

다음의 상세 나란히 비교: BAT42-TAP 제조: Vishay Intertechnology 및 BAT43 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Vishay Intertechnology
BAT42-TAP BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP ✓ 활성

사양 비교

파라미터 BAT42-TAP BAT43
브랜드 Vishay Intertechnology STMicroelectronics
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.04 $0.08
Diode Type Small-Signal Schottky Barrier —
Repetitive Peak Reverse Voltage (VRRM) 30 V 30 V
Average Forward Current (IF(AV)) 200 mA —
Non-Repetitive Surge Current (IFSM) 4.0 A 4 A (tp = 10 ms)
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Reverse Recovery Fast switching (Schottky, no stored charge) —
Junction Capacitance [DATA_NEEDED: diode capacitance] —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage at rated VR] —
패키지 DO-204AH (DO-35) glass axial DO-35 (glass axial, through-hole)
실장 유형 Through Hole Through Hole
Termination Style Axial Leads —
Packaging Suffix -TAP (Ammo tape packing) —
Configuration Single Diode Single diode
Protection Feature PN junction guard ring against ESD / excessive voltage —
동작 온도 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
AEC-Q101 Option Qualified version available on request —
RoHS 상태 Compliant [DATA_NEEDED: RoHS status]
Mounting Technology Wave solder / hand solder —
Device Type — Small Signal Schottky Diode
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
전력 손실 (Ptot) — 200 mW at Tl = 65 C
Technology — Metal-to-silicon Schottky barrier
ESD Protection — Integrated guard ring against excessive voltage
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body

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