BAT42-TAP vs BAT43 Comparaison
Comparaison détaillée côte à côte de BAT42-TAP par Vishay Intertechnology et BAT43 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BAT42-TAP | BAT43 |
|---|---|---|
| Marque | Vishay Intertechnology | STMicroelectronics |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,04 | $0,08 |
| Diode Type | Small-Signal Schottky Barrier | — |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | 30 V |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Non-Repetitive Surge Current (IFSM) | 4.0 A | 4 A (tp = 10 ms) |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Recovery | Fast switching (Schottky, no stored charge) | — |
| Junction Capacitance | [DATA_NEEDED: diode capacitance] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Boîtier | DO-204AH (DO-35) glass axial | DO-35 (glass axial, through-hole) |
| Type de montage | Through Hole | Through Hole |
| Termination Style | Axial Leads | — |
| Packaging Suffix | -TAP (Ammo tape packing) | — |
| Configuration | Single Diode | Single diode |
| Protection Feature | PN junction guard ring against ESD / excessive voltage | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| AEC-Q101 Option | Qualified version available on request | — |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Mounting Technology | Wave solder / hand solder | — |
| Device Type | — | Small Signal Schottky Diode |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Dissipation de puissance (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| ESD Protection | — | Integrated guard ring against excessive voltage |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |