BAT42-TAP vs BAT43 Comparación
Comparación detallada lado a lado de BAT42-TAP por Vishay Intertechnology y BAT43 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BAT42-TAP | BAT43 |
|---|---|---|
| Marca | Vishay Intertechnology | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,04 | $0,08 |
| Diode Type | Small-Signal Schottky Barrier | — |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | 30 V |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Non-Repetitive Surge Current (IFSM) | 4.0 A | 4 A (tp = 10 ms) |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Recovery | Fast switching (Schottky, no stored charge) | — |
| Junction Capacitance | [DATA_NEEDED: diode capacitance] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Encapsulado | DO-204AH (DO-35) glass axial | DO-35 (glass axial, through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Termination Style | Axial Leads | — |
| Packaging Suffix | -TAP (Ammo tape packing) | — |
| Configuration | Single Diode | Single diode |
| Protection Feature | PN junction guard ring against ESD / excessive voltage | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| AEC-Q101 Option | Qualified version available on request | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Mounting Technology | Wave solder / hand solder | — |
| Device Type | — | Small Signal Schottky Diode |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Disipación de potencia (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| ESD Protection | — | Integrated guard ring against excessive voltage |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |