BAT42-TR vs 1N5711 Comparison

Detailed side-by-side comparison of BAT42-TR by Vishay Intertechnology and 1N5711 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Vishay Intertechnology
BAT42-TR

BAT42-TR - 30V 200mA Small Signal Schottky Diode | Vishay

BAT42-TR βœ“ Active
STMicroelectronics
1N5711

1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 βœ“ Active

Specification Comparison

Parameter BAT42-TR 1N5711
Brand Vishay Intertechnology STMicroelectronics
Category Diodes Diodes
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.04 $0.18
Diode Type Small Signal Schottky Diode Small-signal Schottky barrier (RF) diode
Repetitive Peak Reverse Voltage (VRRM) 30 V β€”
Average Forward Current (IF(AV)) 200 mA β€”
Forward Voltage (VF) [DATA_NEEDED: forward voltage at specified test current] 0.41 V (at 1 mA, per MACOM)
Reverse Current (IR) [DATA_NEEDED: reverse current at rated VR] β€”
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] 1 pF
Reverse Recovery Fast switching (low charge, Schottky) β€”
ESD Protection PN junction guard ring β€”
Application Class General purpose β€”
Automotive Qualification AEC-Q101 qualified version available on request β€”
Package DO-204AH (DO-35), axial through-hole glass DO-35 (DO-204AH) hermetic axial-lead glass
Mounting Type Through Hole Through-Hole
Packaging Tape and Reel (TR suffix) β€”
Halogen Free / RoHS Halogen free and RoHS compliant package per cross-reference data β€”
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Related Package Variant Also available in SOD-123 (BAT42W) and MiniMELF types per datasheet β€”
Peak Reverse Voltage (VRRM) β€” 70 V
Continuous Forward Current (IF) β€” 15 mA
Power Dissipation β€” 430 mW
Total Capacitance β€” 2 pF
Dynamic Resistance β€” 35 ohm
Breakdown Voltage (VB) β€” 70 V
Switching Speed β€” Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure β€” Metal-to-silicon junction with PN guard ring
Reverse Leakage Current β€” [DATA_NEEDED: reverse leakage current at rated VR]
RoHS Status β€” Compliant

Datasheets & Resources

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