BAT42-TR vs 1N5711 Comparaison
Comparaison détaillée côte à côte de BAT42-TR par Vishay Intertechnology et 1N5711 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BAT42-TR | 1N5711 |
|---|---|---|
| Marque | Vishay Intertechnology | STMicroelectronics |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,04 | $0,18 |
| Diode Type | Small Signal Schottky Diode | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at specified test current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Current (IR) | [DATA_NEEDED: reverse current at rated VR] | — |
| Junction Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | 1 pF |
| Reverse Recovery | Fast switching (low charge, Schottky) | — |
| ESD Protection | PN junction guard ring | — |
| Application Class | General purpose | — |
| Automotive Qualification | AEC-Q101 qualified version available on request | — |
| Boîtier | DO-204AH (DO-35), axial through-hole glass | DO-35 (DO-204AH) hermetic axial-lead glass |
| Type de montage | Through Hole | Through-Hole |
| Packaging | Tape and Reel (TR suffix) | — |
| Halogen Free / RoHS | Halogen free and RoHS compliant package per cross-reference data | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Related Package Variant | Also available in SOD-123 (BAT42W) and MiniMELF types per datasheet | — |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Total Capacitance | — | 2 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |
| Statut RoHS | — | Compliant |