BAT42-TR vs 1N5711 Comparación
Comparación detallada lado a lado de BAT42-TR por Vishay Intertechnology y 1N5711 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BAT42-TR | 1N5711 |
|---|---|---|
| Marca | Vishay Intertechnology | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,04 | $0,18 |
| Diode Type | Small Signal Schottky Diode | Small-signal Schottky barrier (RF) diode |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Average Forward Current (IF(AV)) | 200 mA | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at specified test current] | 0.41 V (at 1 mA, per MACOM) |
| Reverse Current (IR) | [DATA_NEEDED: reverse current at rated VR] | — |
| Junction Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | 1 pF |
| Reverse Recovery | Fast switching (low charge, Schottky) | — |
| ESD Protection | PN junction guard ring | — |
| Application Class | General purpose | — |
| Automotive Qualification | AEC-Q101 qualified version available on request | — |
| Encapsulado | DO-204AH (DO-35), axial through-hole glass | DO-35 (DO-204AH) hermetic axial-lead glass |
| Tipo de montaje | Through Hole | Through-Hole |
| Packaging | Tape and Reel (TR suffix) | — |
| Halogen Free / RoHS | Halogen free and RoHS compliant package per cross-reference data | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Related Package Variant | Also available in SOD-123 (BAT42W) and MiniMELF types per datasheet | — |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Total Capacitance | — | 2 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |
| Estado RoHS | — | Compliant |