BAT42-TR vs 1N5711 Сравнение

Подробное сравнение бок о бок BAT42-TR от Vishay Intertechnology и 1N5711 от STMicroelectronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

Vishay Intertechnology
BAT42-TR BAT42-TR - 30V 200mA Small Signal Schottky Diode | Vishay

BAT42-TR - 30V 200mA Small Signal Schottky Diode | Vishay

BAT42-TR ✓ Активен
STMicroelectronics
1N5711 1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics

1N5711 ✓ Активен

Сравнение характеристик

Параметр BAT42-TR 1N5711
Бренд Vishay Intertechnology STMicroelectronics
Категория Diodes Diodes
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $0,04 $0,18
Diode Type Small Signal Schottky Diode Small-signal Schottky barrier (RF) diode
Repetitive Peak Reverse Voltage (VRRM) 30 V —
Average Forward Current (IF(AV)) 200 mA —
Forward Voltage (VF) [DATA_NEEDED: forward voltage at specified test current] 0.41 V (at 1 mA, per MACOM)
Reverse Current (IR) [DATA_NEEDED: reverse current at rated VR] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] 1 pF
Reverse Recovery Fast switching (low charge, Schottky) —
ESD Protection PN junction guard ring —
Application Class General purpose —
Automotive Qualification AEC-Q101 qualified version available on request —
Корпус DO-204AH (DO-35), axial through-hole glass DO-35 (DO-204AH) hermetic axial-lead glass
Тип монтажа Through Hole Through-Hole
Packaging Tape and Reel (TR suffix) —
Halogen Free / RoHS Halogen free and RoHS compliant package per cross-reference data —
Рабочая температура [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Related Package Variant Also available in SOD-123 (BAT42W) and MiniMELF types per datasheet —
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Power Dissipation — 430 mW
Total Capacitance — 2 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]
Статус RoHS — Compliant

Даташиты & ресурсы

Все товары Создать BOM Запросить цену