BAT48 vs BAT43 Comparison
Detailed side-by-side comparison of BAT48 by STMicroelectronics and BAT43 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
STMicroelectronics
BAT48
BAT48 - 40V 350mA Small-Signal Schottky Diode | STMicroelectronics
BAT48 β ActiveSTMicroelectronics
BAT43
BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics
BAT43 β ActiveSpecification Comparison
| Parameter | BAT48 | BAT43 |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Category | Diodes | Diodes |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.08 |
| Diode Type | Small-signal Schottky barrier diode | β |
| Reverse Voltage (VRRM) | 40 V | β |
| Average Forward Current (IF(AV)) | 350 mA | β |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | β |
| Reverse Recovery Time (Trr) | approx. 5 ns (per web source data) | β |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | β |
| Turn-On Voltage Feature | Very low turn-on voltage | β |
| Switching Speed | Fast switching | β |
| ESD Protection | Integrated PN junction guard ring | Integrated guard ring against excessive voltage |
| Package | DO-35 (axial, through-hole, glass) | DO-35 (glass axial, through-hole) |
| Series Packages | SOD-123, SOD-323, DO-35 | β |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Application | General purpose, low turn-on, fast switching | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Polarity Marking | Cathode band (per DO-35 convention) | β |
| Device Type | β | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | β | 30 V |
| Forward Continuous Current (IF) | β | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | β | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | β | 4 A (tp = 10 ms) |
| Power Dissipation (Ptot) | β | 200 mW at Tl = 65 C |
| Technology | β | Metal-to-silicon Schottky barrier |
| Forward Voltage | β | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | β | [DATA_NEEDED: reverse leakage current] |
| Case Style | β | Hermetically sealed glass body |
| Configuration | β | Single diode |