BAT48 vs BAT43 Comparaison
Comparaison détaillée côte à côte de BAT48 par STMicroelectronics et BAT43 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BAT48 | BAT43 |
|---|---|---|
| Marque | STMicroelectronics | STMicroelectronics |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,08 |
| Diode Type | Small-signal Schottky barrier diode | — |
| Reverse Voltage (VRRM) | 40 V | — |
| Average Forward Current (IF(AV)) | 350 mA | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Recovery Time (Trr) | approx. 5 ns (per web source data) | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Turn-On Voltage Feature | Very low turn-on voltage | — |
| Switching Speed | Fast switching | — |
| ESD Protection | Integrated PN junction guard ring | Integrated guard ring against excessive voltage |
| Boîtier | DO-35 (axial, through-hole, glass) | DO-35 (glass axial, through-hole) |
| Series Packages | SOD-123, SOD-323, DO-35 | — |
| Type de montage | Through Hole | Through Hole |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Application | General purpose, low turn-on, fast switching | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Polarity Marking | Cathode band (per DO-35 convention) | — |
| Device Type | — | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | — | 30 V |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Dissipation de puissance (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Configuration | — | Single diode |