BAT48 vs BAT43 对比

详细并排对比 BAT48 出自 STMicroelectronics 和 BAT43 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
BAT43 BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 ✓ 量产中

规格对比

参数 BAT48 BAT43
品牌 STMicroelectronics STMicroelectronics
分类 Diodes Diodes
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.08
Diode Type Small-signal Schottky barrier diode —
Reverse Voltage (VRRM) 40 V —
Average Forward Current (IF(AV)) 350 mA —
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Reverse Recovery Time (Trr) approx. 5 ns (per web source data) —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Turn-On Voltage Feature Very low turn-on voltage —
Switching Speed Fast switching —
ESD Protection Integrated PN junction guard ring Integrated guard ring against excessive voltage
封装 DO-35 (axial, through-hole, glass) DO-35 (glass axial, through-hole)
Series Packages SOD-123, SOD-323, DO-35 —
安装类型 Through Hole Through Hole
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Application General purpose, low turn-on, fast switching —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Polarity Marking Cathode band (per DO-35 convention) —
Device Type — Small Signal Schottky Diode
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
功耗(Ptot) — 200 mW at Tl = 65 C
Technology — Metal-to-silicon Schottky barrier
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
Configuration — Single diode

数据手册与资源

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