BAT48 vs BAT43 Comparación
Comparación detallada lado a lado de BAT48 por STMicroelectronics y BAT43 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
BAT48 - 40V 350mA Small-Signal Schottky Diode | STMicroelectronics
BAT48 ✓ ActivoComparación de especificaciones
| Parámetro | BAT48 | BAT43 |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,08 |
| Diode Type | Small-signal Schottky barrier diode | — |
| Reverse Voltage (VRRM) | 40 V | — |
| Average Forward Current (IF(AV)) | 350 mA | — |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Recovery Time (Trr) | approx. 5 ns (per web source data) | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Turn-On Voltage Feature | Very low turn-on voltage | — |
| Switching Speed | Fast switching | — |
| ESD Protection | Integrated PN junction guard ring | Integrated guard ring against excessive voltage |
| Encapsulado | DO-35 (axial, through-hole, glass) | DO-35 (glass axial, through-hole) |
| Series Packages | SOD-123, SOD-323, DO-35 | — |
| Tipo de montaje | Through Hole | Through Hole |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Application | General purpose, low turn-on, fast switching | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Polarity Marking | Cathode band (per DO-35 convention) | — |
| Device Type | — | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | — | 30 V |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Disipación de potencia (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Configuration | — | Single diode |