BAT48 vs BAT43 비교

다음의 상세 나란히 비교: BAT48 제조: STMicroelectronics 및 BAT43 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BAT48 BAT43
브랜드 STMicroelectronics STMicroelectronics
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.00 $0.08
Diode Type Small-signal Schottky barrier diode —
Reverse Voltage (VRRM) 40 V —
Average Forward Current (IF(AV)) 350 mA —
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Reverse Recovery Time (Trr) approx. 5 ns (per web source data) —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Turn-On Voltage Feature Very low turn-on voltage —
Switching Speed Fast switching —
ESD Protection Integrated PN junction guard ring Integrated guard ring against excessive voltage
패키지 DO-35 (axial, through-hole, glass) DO-35 (glass axial, through-hole)
Series Packages SOD-123, SOD-323, DO-35 —
실장 유형 Through Hole Through Hole
동작 온도 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Application General purpose, low turn-on, fast switching —
RoHS 상태 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Polarity Marking Cathode band (per DO-35 convention) —
Device Type — Small Signal Schottky Diode
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
전력 손실 (Ptot) — 200 mW at Tl = 65 C
Technology — Metal-to-silicon Schottky barrier
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
Configuration — Single diode

데이터시트 & 자료

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