BD249C vs BD249C-S Comparison

Detailed side-by-side comparison of BD249C by onsemi and BD249C-S by Bourns. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BD249C BD249C-S
Brand onsemi Bourns
Category Transistors Transistors
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.82 $1.10
Polarity NPN —
Collector-Emitter Voltage (Vceo) 100 V 100 V
Continuous Collector Current 25 A —
Peak Collector Current 40 A —
Power Dissipation (at 25 C case) 125 W —
Transition Frequency (ft) 3 MHz 3 MHz
Complementary PNP Part BD250 series —
Package SOT-93 (through hole) SOT-93 (TO-218), 3 pins, through hole
Mounting Type Through Hole Through Hole
Transistor Type Single Bipolar (BJT) NPN Bipolar Junction Transistor (BJT)
ESD Rating - Machine Model > 400 V (Class C) —
ESD Rating - Human Body Model > 8000 V (Class 3B) —
Flammability Rating UL 94 V-0 @ 0.125 in UL 94 V-0 @ 0.125 in (epoxy, family data)
Lead-Free (Pb-Free) Package Available —
Operating Case Temperature [DATA_NEEDED: operating case temperature range] —
DC Current Gain (hFE) [DATA_NEEDED: hFE range] [DATA_NEEDED: hFE range and test conditions]
Collector-Base Voltage (VCB) — 100 V
Emitter-Base Voltage (VEB) — 5 V
Collector Current (Continuous) — 25 A
Collector Current (Peak) — 40 A
Total Power Dissipation (TC = 25 C) — 125 W
Power Derating — 1.0 W/C above 25 C case temperature
Pin Count — 3
Series Grade — BD249C (C grade, highest VCEO in BD249 series)
Complementary Device — BD250 series (PNP)
Operating Temperature — [DATA_NEEDED: storage/operating junction temperature range]
ESD Rating (HBM) — Class 3B, > 8000 V (per onsemi BD249C family data)
RoHS Status — [DATA_NEEDED: RoHS status for BD249C-S specifically]

Datasheets & Resources

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