BD249C vs BD249C-S 비교
다음의 상세 나란히 비교: BD249C 제조: onsemi 및 BD249C-S 제조: Bourns. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BD249C | BD249C-S |
|---|---|---|
| 브랜드 | onsemi | Bourns |
| 카테고리 | Transistors | Transistors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.82 | $1.10 |
| Polarity | NPN | — |
| 컬렉터-이미터 전압 (Vceo) | 100 V | 100 V |
| Continuous Collector Current | 25 A | — |
| Peak Collector Current | 40 A | — |
| Power Dissipation (at 25 C case) | 125 W | — |
| 전이 주파수 (ft) | 3 MHz | 3 MHz |
| Complementary PNP Part | BD250 series | — |
| 패키지 | SOT-93 (through hole) | SOT-93 (TO-218), 3 pins, through hole |
| 실장 유형 | Through Hole | Through Hole |
| 트랜지스터 유형 | Single Bipolar (BJT) | NPN Bipolar Junction Transistor (BJT) |
| ESD Rating - Machine Model | > 400 V (Class C) | — |
| ESD Rating - Human Body Model | > 8000 V (Class 3B) | — |
| Flammability Rating | UL 94 V-0 @ 0.125 in | UL 94 V-0 @ 0.125 in (epoxy, family data) |
| Lead-Free (Pb-Free) Package | Available | — |
| Operating Case Temperature | [DATA_NEEDED: operating case temperature range] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE range] | [DATA_NEEDED: hFE range and test conditions] |
| Collector-Base Voltage (VCB) | — | 100 V |
| Emitter-Base Voltage (VEB) | — | 5 V |
| Collector Current (Continuous) | — | 25 A |
| Collector Current (Peak) | — | 40 A |
| Total Power Dissipation (TC = 25 C) | — | 125 W |
| Power Derating | — | 1.0 W/C above 25 C case temperature |
| 핀 수 | — | 3 |
| Series Grade | — | BD249C (C grade, highest VCEO in BD249 series) |
| Complementary Device | — | BD250 series (PNP) |
| 동작 온도 | — | [DATA_NEEDED: storage/operating junction temperature range] |
| ESD Rating (HBM) | — | Class 3B, > 8000 V (per onsemi BD249C family data) |
| RoHS 상태 | — | [DATA_NEEDED: RoHS status for BD249C-S specifically] |