BD249C vs BD249C-S Vergleich

Detaillierter Direktvergleich von BD249C von onsemi und BD249C-S von Bourns. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BD249C BD249C-S
Marke onsemi Bourns
Kategorie Transistors Transistors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,82 $1,10
Polarity NPN —
Kollektor-Emitter-Spannung (Vceo) 100 V 100 V
Continuous Collector Current 25 A —
Peak Collector Current 40 A —
Power Dissipation (at 25 C case) 125 W —
Übergangsfrequenz (ft) 3 MHz 3 MHz
Complementary PNP Part BD250 series —
Gehäuse SOT-93 (through hole) SOT-93 (TO-218), 3 pins, through hole
Montageart Through Hole Through Hole
Transistortyp Single Bipolar (BJT) NPN Bipolar Junction Transistor (BJT)
ESD Rating - Machine Model > 400 V (Class C) —
ESD Rating - Human Body Model > 8000 V (Class 3B) —
Flammability Rating UL 94 V-0 @ 0.125 in UL 94 V-0 @ 0.125 in (epoxy, family data)
Lead-Free (Pb-Free) Package Available —
Operating Case Temperature [DATA_NEEDED: operating case temperature range] —
DC Current Gain (hFE) [DATA_NEEDED: hFE range] [DATA_NEEDED: hFE range and test conditions]
Collector-Base Voltage (VCB) — 100 V
Emitter-Base Voltage (VEB) — 5 V
Collector Current (Continuous) — 25 A
Collector Current (Peak) — 40 A
Total Power Dissipation (TC = 25 C) — 125 W
Power Derating — 1.0 W/C above 25 C case temperature
Pin-Anzahl — 3
Series Grade — BD249C (C grade, highest VCEO in BD249 series)
Complementary Device — BD250 series (PNP)
Betriebstemperatur — [DATA_NEEDED: storage/operating junction temperature range]
ESD Rating (HBM) — Class 3B, > 8000 V (per onsemi BD249C family data)
RoHS-Status — [DATA_NEEDED: RoHS status for BD249C-S specifically]

Datenblätter & Ressourcen

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