BD249C vs BD249C-S 对比
详细并排对比 BD249C 出自 onsemi 和 BD249C-S 出自 Bourns。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BD249C | BD249C-S |
|---|---|---|
| 品牌 | onsemi | Bourns |
| 分类 | Transistors | Transistors |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.82 | $1.10 |
| Polarity | NPN | — |
| 集电极-发射极电压（Vceo） | 100 V | 100 V |
| Continuous Collector Current | 25 A | — |
| Peak Collector Current | 40 A | — |
| Power Dissipation (at 25 C case) | 125 W | — |
| 过渡频率（ft） | 3 MHz | 3 MHz |
| Complementary PNP Part | BD250 series | — |
| 封装 | SOT-93 (through hole) | SOT-93 (TO-218), 3 pins, through hole |
| 安装类型 | Through Hole | Through Hole |
| 晶体管类型 | Single Bipolar (BJT) | NPN Bipolar Junction Transistor (BJT) |
| ESD Rating - Machine Model | > 400 V (Class C) | — |
| ESD Rating - Human Body Model | > 8000 V (Class 3B) | — |
| Flammability Rating | UL 94 V-0 @ 0.125 in | UL 94 V-0 @ 0.125 in (epoxy, family data) |
| Lead-Free (Pb-Free) Package | Available | — |
| Operating Case Temperature | [DATA_NEEDED: operating case temperature range] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE range] | [DATA_NEEDED: hFE range and test conditions] |
| Collector-Base Voltage (VCB) | — | 100 V |
| Emitter-Base Voltage (VEB) | — | 5 V |
| Collector Current (Continuous) | — | 25 A |
| Collector Current (Peak) | — | 40 A |
| Total Power Dissipation (TC = 25 C) | — | 125 W |
| Power Derating | — | 1.0 W/C above 25 C case temperature |
| 引脚数量 | — | 3 |
| Series Grade | — | BD249C (C grade, highest VCEO in BD249 series) |
| Complementary Device | — | BD250 series (PNP) |
| 工作温度 | — | [DATA_NEEDED: storage/operating junction temperature range] |
| ESD Rating (HBM) | — | Class 3B, > 8000 V (per onsemi BD249C family data) |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status for BD249C-S specifically] |