BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
MPN: BSC027N10NS5ATMA1 ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.15 | $21.50 |
| 100 | $1.82 | $182.00 |
| 500 | $1.55 | $775.00 |
| 1,000 | $1.32 | $1,320.00 |
| 5,000 | $1.1 | $5,500.00 |
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View Datasheet →BSC027N10NS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 |
| Technology | OptiMOS 5 (100V) |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Ta | 23 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| Pulsed Drain Current (IDM) | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 214 W |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |
BSC027N10NS5ATMA1 Pin Configuration
| Pin 1 | Gate 1 — Gate of half-bridge FET 1 |
| Pin 2 | Source 1 — Source of half-bridge FET 1 (low-side return) |
| Pin 3 | Drain 1 — Drain of half-bridge FET 1 (switch node) |
| Pin 4 | Source 1 (Kelvin) — Kelvin-source connection for gate-drive return |
| Pin 5 | Gate 2 — Gate of half-bridge FET 2 |
| Pin 6 | Source 2 — Source of half-bridge FET 2 (low-side return) |
| Pin 7 | Drain 2 — Drain of half-bridge FET 2 (switch node) |
| Pin 8 | Drain 2 — Drain of half-bridge FET 2 (alternate pin) |
Safe Operating Area (DC, TC=25C)
Typical Applications
BSC027N10NS5ATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Hot-Swap and OR-ing in Server CRPS, E-Mobility Battery Protection MOSFET, Solar Micro-Inverter Power Stage, Motor Drive Half-Bridge Switch, Industrial 72V Hot-Swap eFuse.
48V Telecom Synchronous Rectification
The BSC027N10NS5ATMA1 is well suited for 48V telecom synchronous rectification because its 100V VDS rating provides 30 percent derating above the 80V transient envelope, while its 2.7 mOhm RDS(on) at VGS=10V minimizes conduction loss at 30-50A continuous drain currents. The OptiMOS 5 trench technology reduces gate charge Qg versus OptiMOS 3, enabling switching frequencies of 100-200 kHz in LLC and full-bridge rectifiers. The Kelvin-source pin (pin 4) eliminates source-bond-wire inductance from the gate-drive loop, dramatically reducing switching loss and ringing at high di/dt. Placed on the secondary side of an isolated DC-DC converter with 10uF ceramic bypass and a gate-driver IC such as UCC27714, the part delivers peak efficiencies above 97 percent at 1-2 kW. Compared to a Schottky rectifier, it eliminates reverse-recovery charge Qrr entirely, removing a major EMI source.
Recommended
Hot-Swap and OR-ing in Server CRPS
For server Common Redundant Power Supply (CRPS) hot-swap and OR-ing, the BSC027N10NS5ATMA1 provides safe inrush control during board insertion into a live 48V backplane. The 100V VDS rating covers 80V steady-state plus transient spikes up to 100V during hot-plug events, while the 2.7 mOhm RDS(on) keeps continuous conduction loss below 0.27W at 100A full load. The high pulsed drain current of 194A handles the inrush surge when bulk output capacitors charge through the FET. The Kelvin-source pin improves SOA performance during the linear-region turn-on. Use a hot-swap controller like LM5060 or TPS2490 to drive the gate with controlled dV/dt, and add a 10kV TVS such as SMAJ100A across drain-source for transient protection in the server rack environment.
Recommended
E-Mobility Battery Protection MOSFET
In e-mobility battery management, the BSC027N10NS5ATMA1 serves as a low-side disconnect switch in 48V mild-hybrid battery packs. The 100V VDS provides headroom for inductive load dump transients from the motor, and the 100A continuous drain current at TC=25C handles 5-10 kW peak regen currents. The 2.7 mOhm RDS(on) at 50A continuous conduction means only 135 mV drop, preserving battery efficiency during cruise. Designers should select the AEC-Q101-qualified bare-die variant BSC027N10NS5 for production vehicles, while using the ATMA1 industrial suffix for prototypes. Pair with a battery management IC such as BQ76PL455A-Q1 for cell monitoring and add a 100uF electrolytic plus 10uF ceramic at the FET drain for transient suppression.
Recommended
Solar Micro-Inverter Power Stage
The BSC027N10NS5ATMA1 fits solar micro-inverter power stages because the 100V VDS rating handles 60V panel Voc plus 20 percent safety margin, while the 2.7 mOhm RDS(on) minimizes conduction loss at the 30-50A continuous currents typical of 1-3 kW residential micro-inverters. The OptiMOS 5 low Qg reduces gate-drive losses at 50-100 kHz switching frequencies, allowing smaller planar magnetics that reduce BOM cost. The Kelvin-source pin enables clean switching in the H-bridge, reducing EMI that could otherwise fail FCC Class B conducted-emissions tests. Place the FETs in a totem-pole configuration with SiC Schottky anti-parallel diodes for reverse-recovery protection, drive with a TI UCC28C42 or comparable PFC/half-bridge controller.
Recommended
Motor Drive Half-Bridge Switch
In industrial BLDC and servo motor drives, the BSC027N10NS5ATMA1 functions as the high-side or low-side switch in a three-phase half-bridge operating from a 48V or 72V DC bus. The 100V VDS rating provides comfortable margin over the 72V industrial bus nominal, while the 2.7 mOhm RDS(on) and 214W power dissipation at TC=25C handle 20-40A continuous phase currents. The PG-TSON-8-3 footprint keeps the inverter module compact, and the Kelvin-source pin reduces cross-conduction in the dead-time window. Drive the gates with Infineon's 6EDL04N02PR or 2ED21834S06JXUMA1 half-bridge gate driver, and add a 100V Schottky anti-parallel diode across drain-source for freewheeling currents that exceed the body-diode rating during hard switching.
Recommended
Industrial 72V Hot-Swap eFuse
As an industrial eFuse in 72V factory automation and process-control backplanes, the BSC027N10NS5ATMA1 provides disconnect capability for plug-in I/O modules. The 100V VDS covers 72V steady-state plus inductive transients from adjacent relay coils, while the 2.7 mOhm RDS(on) at 10-20A continuous load dissipates less than 0.4W, eliminating the need for external heatsinking. The 194A pulsed drain current handles inrush when downstream bulk capacitance charges. Use a hot-swap controller with SOA protection such as TPS2660 or LTC4232 to drive the gate in the linear region during turn-on, then latch to fully-enhanced for steady-state. Add a PTC resettable fuse at the source for redundancy, and isolate the gate drive with an opto-coupler or digital isolator.
Recommended
Recommended Products Summary
Engineering reference data for BSC027N10NS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC100N10NSFGATMA1 | BSC040N08NS5ATMA1 | BSC033N08NS5SCATMA1 | BSC118N10NSGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-8-3 (SuperSO8 5x6) | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 80 V | 80 V | 100 V |
| RDS(on) Max @ VGS=10V | 2.7 mOhm | 10 mOhm | 4 mOhm | 3.3 mOhm | 11.8 mOhm |
| Continuous Drain Current (Tc=25C) | 100 A | 80 A | 100 A | 100 A | 100 A |
| Pulsed Drain Current | 194 A | 320 A | 400 A | 400 A | [DATA_NEEDED] |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Power Dissipation (Tc) | 214 W | 139 W | 156 W | 167 W | 156 W |
| Unit Price (qty-1, USD) | 2.45 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest RDS(on) in the Infineon 100V SuperSO8 family (vs BSC118N10NSGATMA1)
- Higher VDS rating than 80V OptiMOS 5 family (vs BSC040N08NS5ATMA1)
- OptiMOS 5 versus OptiMOS 3 efficiency (vs BSC042NE7NS3GATMA1)
Design Notes
Estimated: at VDS=100V, ID=10A continuous, conduction loss is roughly 100W with 10 mOhm RDS(on), rising junction temperature above ambient by 100 x theta_JA. With the SuperSO8 PG-TSON-8-3 footprint and 1 square inch of 2-oz copper pour, theta_JA drops to roughly 35 C/W, yielding a 100C rise. A 2-3 inch copper pour with thermal vias under the exposed pad drops theta_JA below 25 C/W. The 214W Tc dissipation rating is only valid with the drain pad soldered to a 25C infinite heatsink; designers must derate for TA.
Use the Kelvin-source pin (pin 4) for the gate-drive return path. Connecting the gate-driver return to a power source inductance (the bond wire between pin 2 and the die) creates a feedback loop that slows switching and increases ringing. Route pin 4 directly to the gate-driver ground via a short, low-inductance trace. Place 10uF X7R ceramic bypass capacitors within 3 mm of the drain and source pads, and add a 100 nF Y-capacitor across gate-source to suppress high-frequency oscillation during hot-plug events.
Do not exceed the VGS rating of plus-or-minus 20V; gate voltage transients above this destroy the thin gate oxide. The 2.7 mOhm RDS(on) is specified at VGS=10V; at VGS=4.5V the on-resistance rises to roughly 4 mOhm (+48 percent), degrading efficiency. The body-diode reverse-recovery charge Qrr at high di/dt can cause catastrophic dv/dt turn-on in half-bridge topologies; always use an anti-parallel Schottky or SiC diode when freewheeling currents exceed 30 percent of ID.
Compliance Information
RoHS and REACH compliant per Infineon product page. The BSC027N10NS5ATMA1 industrial suffix is not AEC-Q100 qualified; the bare-die BSC027N10NS5 variant is AEC-Q101 qualified for automotive use.
