BSC014N04LSIATMA1 vs BSC050N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSIATMA1 by Infineon and BSC050N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
BSC014N04LSIATMA1 β ActiveInfineon
BSC050N03LSGATMA1
BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
BSC050N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC014N04LSIATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.36 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench, thin-wafer) | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc) | 100 A | β |
| Continuous Drain Current (ID, Ta) | 31 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | β |
| RDS(on) max at VGS=10 V | 1.4 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation (PD, Tc) | 96 W | β |
| Power Dissipation (PD, Ta) | 2.5 W | β |
| Operating Temperature Range | -55 C to +150 C | -55 C to +150 C |
| Package | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Tradename | OptiMOS | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC050N03LSGATMA1 |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 80 A |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | β | 5 mOhm |
| Power Dissipation (PD) at Tc | β | 50 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Channel Type | β | N-Channel |