BSC014NE2LSIATMA1 vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC014NE2LSIATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC014NE2LSIATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | N-Channel MOSFET (OptiMOS 25V) | Trench (OptiMOS 5, thin-wafer) |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Ta) | 33 A | — |
| Continuous Drain Current (ID, Tc) | [DATA_NEEDED: Tc condition rating] | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| On-State Resistance RDS(on) | 1.4 mOhm (typ) at VGS = 10 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 74 W | — |
| Operating Junction Temperature | -55 °C to +150 °C | — |
| Package | PG-TDSON-8-7 (SuperSO8) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Operating Temperature Range | — | -55C to +175C |