BSC016N06NSATMA1 vs BSC028N06NSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC016N06NSATMA1 disebabkan oleh Infineon dan BSC028N06NSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC016N06NSATMA1 BSC028N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS™ 5 60V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc) 100 A —
Continuous Drain Current (ID, TA) 30 A —
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ —
Total Gate Charge (Qg) 71 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Power Dissipation (TA) 2.5 W 3 W
Power Dissipation (TC) 139 W 100 W
Gambaran Suhu Operasi -55 °C to +150 °C —
Kemasan PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited) 1
Status RoHS Compliant Compliant
Gate Drive (recommended) 10 V —
Technology OptiMOS™ 5 MOSFET N-Channel (OptiMOS 5)
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Suhu Hubungan Operasi — -55C to +175C
Boson Bebas — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga