BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon
MPN: BSC018N04LSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.9 | $0.90 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.61 | $305.00 |
| 1,000 | $0.52 | $520.00 |
Drop-in alternatives for BSC018N04LSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC014N04LSATMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →BSC035N04LSGATMA1
✅ Drop-In✓ In Stock
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View Datasheet →BSC054N04NSGATMA1
✅ Drop-In✓ In Stock
$0.42 / Unit
View Datasheet →BSC027N10NS5ATMA1
✅ Drop-In✓ In Stock
$1.1 / Unit
View Datasheet →FDMS8018
✅ Drop-In📋 Reference alternative (not in catalog)
BSC018N04LSGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) @ TC=25°C | 100 A |
| Continuous Drain Current (ID) @ TA=25°C | 30 A |
| Power Dissipation (PD) @ TC=25°C | 125 W |
| Power Dissipation (PD) @ TA=25°C | 2.5 W |
| RDS(on) Max @ VGS=10 V | 1.8 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V |
| Operating Temperature Range | -55°C to +150°C (TJ) |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (Pb-free plating) |
| Avalanche Tested | 100% (per datasheet) |
| JEDEC Qualification | Yes (qualified per JEDEC for target applications) |
BSC018N04LSGATMA1 Pin Configuration
| Pin 1 | Source — Source connection (low-side) |
| Pin 2 | Source — Source connection (low-side) |
| Pin 3 | Source — Source connection (low-side) |
| Pin 4 | Gate — Gate drive input (logic-level) |
| Pin 5 | Source — Source connection (low-side) |
| Pin 6 | Drain — Drain connection (high-side) |
| Pin 7 | Drain — Drain connection (high-side) |
| Pin 8 | Drain — Drain connection (high-side) |
Safe Operating Area
Typical Applications
BSC018N04LSGATMA1 is suitable for 6 applications: DC-DC Synchronous Rectification, Hot-Swap and OR-ing Controllers, High-Current Load Switch, Motor Drive Low-Side Switch, Battery Protection and Power Tools, Telecom and Server Power Systems.
DC-DC Synchronous Rectification
The BSC018N04LSGATMA1's 1.8 mΩ RDS(on) and 100 A ID rating make it an ideal low-side synchronous rectifier in 12 V to 1 V buck converters for server, telecom, and computing power supplies. Its logic-level 4.5 V VGS drive allows direct connection to standard PWM controller outputs without a gate-driver IC, simplifying the synchronous FET footprint. Compared to a Schottky diode rectifier, the BSC018N04LSGATMA1 reduces rectifier losses by 60-80% at full load, enabling >95% converter efficiency in multi-phase VR designs. The OptiMOS 3 technology also minimizes Qg × RDS(on) FOM for reduced switching loss at high frequencies above 300 kHz.
Recommended
Hot-Swap and OR-ing Controllers
In 12 V and 24 V distributed-power hot-swap and OR-ing applications, the BSC018N04LSGATMA1 acts as the low-loss pass element that allows board insertion/removal without arcing or system rail collapse. Its 40 V VDS rating comfortably exceeds 24 V bus transients, and the 1.8 mΩ on-resistance keeps dissipation under 2 W even at 30 A continuous load. The 100% avalanche rating provides robust protection against the inductive kick that occurs when downstream bulk capacitance dumps into the FET during a hot-swap event. In redundant OR-ing designs, the low RDS(on) directly reduces the forward-voltage drop versus Schottky OR-ing diodes, improving overall system efficiency.
Recommended
High-Current Load Switch
The BSC018N04LSGATMA1 serves as an efficient high-side or low-side load switch in industrial and computing systems where 10-50 A must be switched on/off under digital control. Its PG-TDSON-8-1 SuperSO8 footprint handles the thermal load of 30 A continuous at TA=25°C with proper copper area, while the logic-level gate enables direct drive from 3.3 V GPIO or PWM signals via a simple gate booster. Compared to mechanical relays, the MOSFET provides silent, bounce-free switching at kHz rates and 10x longer service life. The part's 100% avalanche rating also tolerates the inductive kickback of solenoids, motors, and transformers at switch-off.
Recommended
Motor Drive Low-Side Switch
In brushless DC (BLDC) and stepper motor H-bridge topologies, the BSC018N04LSGATMA1 functions as the low-side FET per phase in 12 V / 24 V battery-powered applications such as cordless power tools, drones, and e-bikes. The 100 A pulsed drain current handles motor stall currents, while the 1.8 mΩ RDS(on) minimizes voltage drop across the FET, delivering more torque to the motor and less wasted heat. The logic-level drive allows direct connection to 3.3 V gate drivers without level shifters, simplifying the inverter BOM. The part is fully RoHS compliant and qualified per JEDEC for industrial and consumer motor-drive environments.
Recommended
Battery Protection and Power Tools
In 4S-6S lithium-ion battery packs for power tools, e-bikes, and portable equipment, the BSC018N04LSGATMA1 acts as the discharge FET or low-side protection switch in the BMS. Its 40 V VDS comfortably handles the maximum charged voltage of a 6S pack (25.2 V) plus transient overshoot, while the 1.8 mΩ RDS(on) minimizes IR loss during high-current discharge, preserving battery runtime. The 100% avalanche rating protects against the inductive kick from motor windings, and the small SuperSO8 footprint allows high-power-density designs inside compact battery housings. The part's Pb-free, RoHS-compliant termination meets consumer electronics environmental requirements.
Recommended
Telecom and Server Power Systems
In 48 V-input isolated DC-DC converters and intermediate bus converters for telecom and hyperscale data-center power architectures, the BSC018N04LSGATMA1 is used as a primary-side switch in 24 V/48 V buck stages. Although the VDS is rated only 40 V (suitable for the post-transformer rectified rail), the ultra-low 1.8 mΩ RDS(on) at high currents minimizes conduction loss and enables high-power-density designs above 500 W per phase. The 100% avalanche-tested rating and JEDEC qualification provide the reliability margin required for 24/7 server operation, and the small SuperSO8 package simplifies multi-phase paralleling on crowded PCBs. The Infineon OptiMOS 3 technology is industry-proven in telecom power for over a decade.
Recommended
Recommended Products Summary
Engineering reference data for BSC018N04LSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC014N04LSATMA1 | BSC035N04LSGATMA1 | BSC054N04NSGATMA1 | FDMS8018 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | Power-SO8 (5x6) - compatible footprint |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| VDS (V) | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V (mΩ) | 1.8 mΩ | 1.4 mΩ (lower loss) | 3.5 mΩ (higher loss) | 5.4 mΩ (higher loss) | 1.8 mΩ (same) |
| Continuous Drain Current ID @ TC=25°C (A) | 100 A | 100 A | 80 A | 70 A | 100 A |
| Gate Drive Level | Logic-level (4.5 V min VGS) | Logic-level | Logic-level | Standard-level (10V VGS) | Standard-level |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | onsemi PowerTrench |
| Approx. Unit Price (USD) | 0.90 (qty 1) | ~1.10 (higher) | ~0.75 (lower) | ~0.65 (lower) | ~0.95 (similar) |
Key Differentiators
- Lowest RDS(on) in Infineon 40 V logic-level SuperSO8 family at competitive cost (vs BSC035N04LSGATMA1)
- Logic-level drive (4.5 V VGS) eliminates need for gate-driver IC (vs BSC054N04NSGATMA1)
- 100% avalanche-tested rating for robust inductive switching (vs FDMS8018 (onsemi cross-reference))
- Industry-standard SuperSO8 footprint compatible with cross-vendor drop-in (vs Custom non-standard SMD packages)
Design Notes
Estimated: At continuous 30 A load and 1.8 mΩ RDS(on), conduction loss is P = I² × R = 30² × 0.0018 = 1.62 W. The PG-TDSON-8-1 SuperSO8 with 1 sq-in of 2 oz copper on a standard 1.6 mm FR-4 PCB yields approximately RθJA ≈ 50°C/W, giving a 81°C temperature rise above ambient. For full 100 A TC-rated operation, the part must be soldered to a large copper pour or aluminum-core PCB; otherwise derate to roughly 30 A at TA=70°C. Always check the datasheet thermal resistance curve for your exact PCB layout.
The PG-TDSON-8-1 SuperSO8 package requires a large copper pour on the source pins (1, 2, 3, 5) and the exposed thermal pad to achieve the rated thermal and electrical performance. Per the Infineon datasheet land-pattern recommendation, the exposed pad should have at least 6 thermal vias (0.3 mm drill) to the opposite copper layer. Place the gate-drive resistor as close as possible to pin 4 to minimize parasitic inductance. Keep the gate-trace short and away from the drain switching node to avoid dv/dt-induced turn-on.
Do not assume the 1.8 mΩ RDS(on) specification applies at logic-level drive - the datasheet specifies RDS(on) primarily at VGS=10 V; at 4.5 V VGS the RDS(on) is approximately 2x higher. For direct 3.3 V GPIO drive, ensure the gate-source voltage reaches a full 4.5 V under worst-case load, or use a small gate-driver IC. Also, do not exceed the 40 V VDS rating under load-dump or inductive kickback conditions; add a TVS diode or snubber if the switching node can overshoot above 36 V. The 100% avalanche rating provides margin but is not a substitute for proper voltage clamping.
Minimize the source-inductance loop by placing the gate-driver return and the FET source pins on the same copper plane. For high-frequency synchronous rectification (above 500 kHz), use a Kelvin connection to pin 5 or pin 3 for the gate-driver return to eliminate source-inductance-induced gate-voltage bounce. Keep the drain-node copper area small to reduce parasitic capacitance and switching loss. The standard Power-SO8 / SuperSO8 land pattern is industry-compatible across vendors, enabling pin-compatible drop-in alternatives without PCB rework.
Compliance Information
Pb-free plating per Infineon datasheet; RoHS and REACH compliant per manufacturer product page. JEDEC-qualified for target applications. Not AEC-Q100 qualified (industrial/consumer use). Halogen-free status not explicitly stated in the provided verified data.
