BSC018N04LSGATMA1 vs BSC054N04NSGATMA1 Comparison
Detailed side-by-side comparison of BSC018N04LSGATMA1 by Infineon and BSC054N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC054N04NSGATMA1
BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon
BSC054N04NSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC018N04LSGATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 100 A | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 30 A | β |
| Power Dissipation (PD) @ TC=25Β°C | 125 W | β |
| Power Dissipation (PD) @ TA=25Β°C | 2.5 W | β |
| RDS(on) Max @ VGS=10 V | 1.8 mΞ© | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | β |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | -55C to +150C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (Pb-free plating) | Compliant |
| Avalanche Tested | 100% (per datasheet) | β |
| JEDEC Qualification | Yes (qualified per JEDEC for target applications) | β |
| Part Number | β | BSC054N04NSGATMA1 |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Tc=25C | β | 81 A |
| Continuous Drain Current (ID) at Ta=25C | β | 17 A |
| On-Resistance RDS(on) max at VGS=10V | β | 5.4 mOhm |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation at Tc=25C | β | 57 W |
| Power Dissipation at Ta=25C | β | 2.5 W |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Gate Drive Voltage (recommended) | β | 10 V |
| Lead-Free Reflow | β | Yes |