BSC020N03LSGATMA1 vs BSC120N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC020N03LSGATMA1 by Infineon and BSC120N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC020N03LSGATMA1
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 β ActiveInfineon
BSC120N03LSGATMA1
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC020N03LSGATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | 12 A |
| Continuous Drain Current (ID) at Tc=25C | 100 A | 39 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc=25C | 96 W | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +150C (TJ) |
| Package / Case | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 (per JEDEC J-STD-020) |
| Product Family | β | OptiMOS 3 |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| On-State Resistance RDS(on) at VGS=10V | β | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 28 W |
| Package | β | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |