BSC020N03LSGATMA1 vs BSC120N03LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC020N03LSGATMA1 dari Infineon dan BSC120N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC020N03LSGATMA1 BSC120N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta=25C 28 A 12 A
Continuous Drain Current (ID) at Tc=25C 100 A 39 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.2 V (typical range, per datasheet) [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) at VGS=10V approximately 2.0 mOhm —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc=25C 96 W —
Rentang Suhu Kerja -55 C to +150 C (junction) -55C to +150C (TJ)
Paket / Case PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) —
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020, per Infineon datasheet) 1 (per JEDEC J-STD-020)
Product Family — OptiMOS 3
Gate-Source Voltage (VGS) max — +/-20 V
On-State Resistance RDS(on) at VGS=10V — 12 mOhm (typical)
On-State Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 28 W
Paket — PG-TDSON-8-5 (SuperSO-8, 5x6 mm)

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