BSC022N04LS6ATMA1 vs BSC0901NSATMA1 Comparison

Detailed side-by-side comparison of BSC022N04LS6ATMA1 by Infineon and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC022N04LS6ATMA1 BSC0901NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS™ 6 (N-channel trench) N-Channel Trench MOSFET (OptiMOS)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Ta 27 A 28 A
Continuous Drain Current (ID) at Tc 100 A 100 A
Maximum Pulsed Drain Current (IDM) 139 A —
On-Resistance RDS(on) max 2.2 mOhm at VGS=10 V —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 79 W —
Package SuperSO8 5x6 (PG-TDSON-8-1) TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Mounting Type Surface Mount Surface Mount
Channel Type N-Channel —
Pin Count 8 —
Operating Temperature -55 C to +175 C (junction) —
RoHS Status Compliant Compliant
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Operating Temperature Range — -55C to +150C
Moisture Sensitivity Level (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

Datasheets & Resources

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