BSC026N04LSATMA1 vs BSC022N04LS6ATMA1 Comparison

Detailed side-by-side comparison of BSC026N04LSATMA1 by Infineon and BSC022N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC026N04LSATMA1

BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΩ MOSFET | Infineon

BSC026N04LSATMA1 ✓ Active
Infineon
BSC022N04LS6ATMA1

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 ✓ Active

Specification Comparison

Parameter BSC026N04LSATMA1 BSC022N04LS6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.66
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ 5 N-Channel Power MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) max ±20 V
Continuous Drain Current (ID, Ta) 23 A
Continuous Drain Current (ID, Tc=25°C) 100 A
Pulsed Drain Current (IDM, Tc=25°C) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) typ @ VGS=10V 2.6 mΩ
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: max RDS(on)]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value]
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 63 W 79 W
Operating Temperature Range -55°C to +150°C
Package PG-TDSON-8-6 (TDSON 5x6 mm) SuperSO8 5x6 (PG-TDSON-8-1)
Mounting Type Surface Mount Surface Mount
Technology Trench-gate OptiMOS™ 5 OptiMOS™ 6 (N-channel trench)
Channel Type N-Channel N-Channel
RoHS Status Compliant Compliant
Continuous Drain Current (ID) at Ta 27 A
Continuous Drain Current (ID) at Tc 100 A
Maximum Pulsed Drain Current (IDM) 139 A
On-Resistance RDS(on) max 2.2 mOhm at VGS=10 V
Pin Count 8
Operating Temperature -55 C to +175 C (junction)

Datasheets & Resources

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