BSC027N04LSGATMA1 vs BSC011N03LSIATMA1 Comparison

Detailed side-by-side comparison of BSC027N04LSGATMA1 by Infineon and BSC011N03LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC027N04LSGATMA1 BSC011N03LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS™ 30 V
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM value]
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
Power Dissipation (TC=25°C) 83 W —
Operating Temperature Range -55°C to +150°C —
Package PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-7 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) —
MSL Level 1 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Halogen Free Yes —
Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at TA=25°C — 37 A
Continuous Drain Current (ID) at TC=25°C — 100 A
On-State Resistance RDS(on) at VGS=10V — 1.1 mΩ (typical)
Power Dissipation at TA=25°C — 2.5 W
Power Dissipation at TC=25°C — 96 W
Operating Junction Temperature — -55 °C to +150 °C

Datasheets & Resources

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