BSC027N04LSGATMA1 vs BSC011N03LSIATMA1 对比

详细并排对比 BSC027N04LSGATMA1 出自 Infineon 和 BSC011N03LSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSC027N04LSGATMA1 BSC011N03LSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $1.32
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS™ 30 V
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM value]
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
功耗(TC=25°C) 83 W —
工作温度范围 -55°C to +150°C —
封装 PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-7 (Surface Mount)
安装类型 Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) —
MSL 等级 1 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
无卤 Yes —
Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at TA=25°C — 37 A
Continuous Drain Current (ID) at TC=25°C — 100 A
On-State Resistance RDS(on) at VGS=10V — 1.1 mΩ (typical)
Power Dissipation at TA=25°C — 2.5 W
Power Dissipation at TC=25°C — 96 W
工作结温 — -55 °C to +150 °C

数据手册与资源

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