BSC027N06LS5ATMA1 vs BSC059N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC027N06LS5ATMA1 by Infineon and BSC059N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 βœ“ Active
Infineon
BSC059N04LSGATMA1 BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC027N06LS5ATMA1 BSC059N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.39
Manufacturer Infineon Technologies β€”
Series OptiMOSβ„’ 5 β€”
Part Status Active β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) OptiMOS 3 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 60 V 40 V
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) Logic-level β€”
Continuous Drain Current (ID) at Tc=25Β°C 100 A β€”
Continuous Drain Current (ID) at Tc=100Β°C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] β€”
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm β€”
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] β€”
Power Dissipation (PD) at Tc=25Β°C 83 W β€”
Operating Temperature Range -55Β°C to +150Β°C -55 C to +150 C
Package / Case PG-TDSON-8-7 (SuperSO8 5x6) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Gate Charge (Qg) [DATA_NEEDED: total Qg] β€”
Avalanche Energy Rated Yes β€”
RoHS Status Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 β€”
Continuous Drain Current (ID, Tc=25C) β€” 73 A
Continuous Drain Current (ID, Ta=25C) β€” 16 A
On-State Resistance RDS(on) max @ VGS=10V β€” 5.9 mOhm
Power Dissipation (Tc=25C) β€” 50 W
Power Dissipation (Ta=25C) β€” 2.5 W
Gate-Source Threshold Voltage VGS(th) β€” 1.2 V to 2.0 V (typ)
Total Gate Charge Qg β€” [DATA_NEEDED: Qg total, typical nC]
Package β€” PG-TDSON-8-5 (SuperSO8 5x6 mm)
MSL Level β€” 1 (per JEDEC J-STD-020)
REACH Status β€” Compliant
Channel Type β€” N-Channel

Datasheets & Resources

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