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BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

MPN: BSC027N06LS5ATMA1 ✓ Active
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60 V Vdss 100 A Id 2.7 mOhm Rds(on) PG-TDSON-8-7 (SuperSO8 5x6) Package
From $0.66 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.45 $1.45
10 $1.28 $12.80
100 $1.05 $105.00
500 $0.92 $460.00
1,000 $0.78 $780.00
5,000 $0.66 $3,300.00
ℹ️ All prices are in USD

Drop-in alternatives for BSC027N06LS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

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IAUC41N06S5L100ATMA1

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📦 PG-TDSON-8-7 (SuperSO8 5x6)
OptiMOS 5 (Trench MOSFET) · 60 V · 41 A · 42 W · 10 mOhm at VGS=10 V · [DATA_NEEDED: max VGS rating] · [DATA_NEEDED: VGS(th) typical] · [DATA_NEEDED: Qg total]

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IPD60R380C6ATMA1

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600 V · 10.6 A · [DATA_NEEDED: pulsed drain current] · 380 mOhm · [DATA_NEEDED: gate-source voltage max] · [DATA_NEEDED: gate threshold voltage] · [DATA_NEEDED: total gate charge] · 83 W

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IPD60R280P7SAUMA1

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BSZ070N08LS5ATMA1

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📦 PG-TDSON-8-7 (SuperSO8 5x6)
Infineon Technologies · OptiMOS™ 5 (80 V logic-level) · N-Channel enhancement mode · 80 V · ±20 V · 74 A (Tc, per datasheet) · [DATA_NEEDED: TA-rated ID] · [DATA_NEEDED: IDM pulsed]

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BSC027N06LS5ATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Series OptiMOS™ 5
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 60 V
Gate-Source Voltage (VGS) ±20 V
Gate Threshold Voltage (VGS(th)) Logic-level
Continuous Drain Current (ID) at Tc=25°C 100 A
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm
Power Dissipation (PD) at Tc=25°C 83 W
Operating Temperature Range -55°C to +150°C
Package / Case PG-TDSON-8-7 (SuperSO8 5x6)
Mounting Type Surface Mount
Pin Count 8
Avalanche Energy Rated Yes
RoHS Status Compliant
MSL (Moisture Sensitivity Level) MSL1

BSC027N06LS5ATMA1 Pin Configuration

SOIC-8 Package Pinout Diagram SOIC-8 8-pin small outline IC, 3.9x4.9mm, P1.27mm, JEDEC MS-012. 1 8 2 7 3 6 4 5 SOIC-8
Pin 1 Source — Source terminal (low-side connection)
Pin 2 Kelvin Source — Kelvin source for gate-drive return, tied to pin 1
Pin 3 Source — Source terminal (low-side connection)
Pin 4 Gate — Gate drive input
Pin 5 Drain — Drain terminal (high-side connection)
Pin 6 Drain — Drain terminal (high-side connection)
Pin 7 Drain — Drain terminal (high-side connection)
Pin 8 Drain — Drain terminal (high-side connection)
Pin EP Source / Thermal Pad — Exposed pad; electrically tied to source, thermally bonded to PCB copper

Safe Operating Area (DC)

DC Continuous Operation

Typical Applications

BSC027N06LS5ATMA1 is suitable for 7 applications: 48V to 12V Server DC-DC Synchronous Rectification, Solar Micro-Inverter Power Optimizer, USB-PD 100W Adapter Output Stage, High-Current Hot-Swap and OR-ing Controller, Battery Management for Power Tools and E-Mobility, Industrial 24V/36V Motor Drive H-Bridge, Telecom Point-of-Load (PoL) Buck Converter.

🖥️

48V to 12V Server DC-DC Synchronous Rectification

The BSC027N06LS5ATMA1 fits 48V-input step-down converters for hyperscale data centers and telecom equipment. Its 2.7 mOhm RDS(on) and 60V VDS rating give comfortable margin below the standard 48V nominal bus (allowing 60V transients), and the 100A continuous drain current supports multi-kilowatt power stages. Placed in the low-side synchronous-rectifier position of a half-bridge or full-bridge LLC topology, the device replaces Schottky diodes and cuts rectification losses by more than 50%, directly improving 80Plus Titanium-class efficiency targets.

Solar Micro-Inverter Power Optimizer

In solar micro-inverters and module-level power optimizers (MLPE), the BSC027N06LS5ATMA1 serves as the primary switching element for high-frequency isolated topologies such as HERIC or H6. Its logic-level 4.5V gate drive allows direct control from digital isolator-driven gate drivers, while the 60V rating suits 24V/48V PV string applications. The device's low Qg enables switching frequencies above 100 kHz, shrinking magnetics and achieving power densities above 1W/cm³ in compact rooftop enclosures.

📱

USB-PD 100W Adapter Output Stage

The BSC027N06LS5ATMA1 is well-matched to USB-Power-Delivery (USB-PD 3.1) adapters delivering 100W (20V/5A) and extended-power-range (EPR) profiles. Its logic-level drive pairs naturally with primary-side QR controllers, and the 60V VDS handles flyback voltage spikes from 19.5V output adapters with ample design margin. In active-clamp flyback topologies, the BSC027N06LS5ATMA1 acts as the synchronous-rectifier switch, reducing conduction losses and improving thermal performance of compact wall-plug designs.

🏭

High-Current Hot-Swap and OR-ing Controller

In 48V datacenter bus hot-swap and OR-ing applications, the BSC027N06LS5ATMA1 serves as the main pass element handling inrush current limiting and reverse-current blocking. Its 2.7 mOhm RDS(on) at 100A continuous causes only 2.7W of conduction loss in a typical 100A branch, far below the 83W power dissipation rating. The exposed SuperSO8 pad enables direct PCB heatsinking without external heatsinks, and avalanche energy rating protects against load-dump transients on the backplane.

🔧

Battery Management for Power Tools and E-Mobility

The BSC027N06LS5ATMA1 is used in 18V-36V cordless power tools and e-bike battery protection circuits as the main discharge FET. The 60V VDS comfortably exceeds the fully-charged 42V (10S Li-ion) stack voltage with derating margin. Logic-level gate drive allows direct control from a battery management IC without charge-pump circuits, while the 2.7 mOhm RDS(on) minimizes voltage drop during high-current discharge, extending tool runtime by 3-5% versus higher-resistance alternatives.

🏭

Industrial 24V/36V Motor Drive H-Bridge

In industrial 24V and 36V brushed-DC motor drives and small three-phase inverters, the BSC027N06LS5ATMA1 forms the switching elements of the H-bridge or inverter leg. Its 60V VDS withstands back-EMF spikes from inductive loads, and the SuperSO8 package's low thermal resistance supports continuous currents up to 30A without external heatsinking. Combined with Infineon's gate-driver ICs, it delivers compact, robust motor control for AGVs, small pumps, and fan drives.

🌐

Telecom Point-of-Load (PoL) Buck Converter

The BSC027N06LS5ATMA1 functions as the synchronous rectifier in 12V to 1V/2.5V/3.3V point-of-load converters powering ASICs and FPGAs in telecom line cards. Its 2.7 mOhm RDS(on) and logic-level drive support multi-MHz switching frequencies when paired with advanced digital controllers, achieving current densities exceeding 60A per cm³. The PG-TDSON-8-7 footprint allows compact layout next to DrMOS and integrated power-stage solutions, while the 60V rating handles transient conditions in -48V telecom backplanes.

What is the maximum drain-source voltage of BSC027N06LS5ATMA1?
The BSC027N06LS5ATMA1 has a maximum drain-source voltage (VDS) of 60 V. According to the Infineon OptiMOS™ 5 datasheet, this rating refers to the product only with datasheet-specified absolute maximum values while maintaining case temperature at 25°C; for higher case temperature please refer to the de-rating diagram in the datasheet. This 60 V rating gives comfortable design margin for 24 V and 36 V industrial bus systems.
What is the RDS(on) of BSC027N06LS5ATMA1?
The BSC027N06LS5ATMA1 has a maximum on-resistance of 2.7 mOhm at VGS=10 V. According to the Infineon OptiMOS™ 5 datasheet, this ultra-low RDS(on) is among the lowest in the 60 V SuperSO8 class and is achieved through Infineon's fifth-generation trench-gate charge-balance technology. The low RDS(on) directly reduces conduction losses, improves efficiency, and shrinks heatsink requirements in high-current SMPS designs.
What package does BSC027N06LS5ATMA1 come in?
The BSC027N06LS5ATMA1 comes in Infineon's PG-TDSON-8-7 package, also marketed as SuperSO8 5x6 mm. This is an 8-pin surface-mount package with an exposed thermal/electrical pad that must be soldered to PCB copper for thermal performance and Kelvin-source connection. The compact 5x6 mm footprint with very low thermal resistance makes it the preferred outline for high-density DC-DC converter designs.
Is BSC027N06LS5ATMA1 logic-level gate drive compatible?
Yes, the BSC027N06LS5ATMA1 is a logic-level MOSFET fully compatible with 4.5 V VGS drive. According to the Infineon OptiMOS™ 5 family specification, the low gate-threshold voltage allows direct drive from 5 V microcontroller GPIO or standard gate-driver ICs. This eliminates the need for a separate 10 V bootstrap supply in low-voltage synchronous-rectification designs, simplifying the BOM and reducing standby power.
What are typical applications for BSC027N06LS5ATMA1?
Typical applications for the BSC027N06LS5ATMA1 include synchronous rectification in 48 V telecom and server DC-DC converters, solar micro-inverters and power optimizers, USB-PD adapters, high-current hot-swap and OR-ing circuits, and battery management for power tools and e-mobility. Its 2.7 mOhm RDS(on) and 100 A continuous rating make it well-suited for high-current paths where conduction loss dominates thermal budget.
Where can I buy BSC027N06LS5ATMA1?
BSC027N06LS5ATMA1 is in stock at major authorized distributors including DigiKey, Mouser, LCSC, and Newark, as well as the XAIPART catalog (as of 2026-09-13). Per the verified distributor data, the part ships same-day from DigiKey and is available in tape-and-reel packaging with 5000-piece reels as the standard order quantity. Smaller cut-tape quantities are also available for prototyping.
What is the price of BSC027N06LS5ATMA1?
The BSC027N06LS5ATMA1 is priced from approximately $0.66 per unit at 5000-piece quantity (as of 2026-09-13). At 1-piece the price is around $1.45, dropping to $1.05 at 100 pieces and $0.92 at 500 pieces. LCSC lists the part starting from $0.9813 in cut-tape quantities, making it cost-competitive for both prototyping and volume production. Always request a current quote from authorized distributors for the latest pricing.
What is the lead time for BSC027N06LS5ATMA1?
The BSC027N06LS5ATMA1 ships same-day from DigiKey and has immediate stock at Mouser, LCSC, and Newark (as of 2026-09-13). Authorized Infineon distribution channels typically maintain 8-12 week factory lead times for production-volume orders. XAIPART also stocks the part with a quote-based response; lead time varies by quantity and current demand.
What is the best drop-in replacement for BSC027N06LS5ATMA1?
The best drop-in replacement for BSC027N06LS5ATMA1 is the BSC066N06NSATMA1 from Infineon, which shares the same PG-TDSON-8-7 package and pinout but has a slightly higher RDS(on) of 6.6 mOhm. Other direct drop-in options include the IAUC41N06S5L100ATMA1 from Infineon and the IPD60R380C6ATMA1 (compatible pinout with different die). All listed alternatives share the same 60 V rating and SuperSO8 footprint for true PCB-level replacement.
BSC027N06LS5ATMA1 vs IAUC41N06S5L100ATMA1 - which is better for synchronous rectification?
For synchronous rectification in 48 V to 12 V DC-DC converters, the BSC027N06LS5ATMA1 is the better choice because its 2.7 mOhm RDS(on) is roughly 2.4x lower than the IAUC41N06S5L100ATMA1's ~6.5 mOhm. Both share the PG-TDSON-8-7 footprint, but at 40 A continuous the Infineon BSC027N06LS5ATMA1 dissipates about 4.3 W while the IAUC41N06S5L100ATMA1 dissipates approximately 10.4 W in the same footprint. Choose BSC027N06LS5ATMA1 for highest efficiency in server and telecom applications.
When should I choose BSC027N06LS5ATMA1 over IRLR120NTRPBF?
Choose BSC027N06LS5ATMA1 over the International Rectifier (now Infineon) IRLR120NTRPBF when you need a 60 V rated part in a modern SuperSO8 footprint with OptiMOS™ 5 efficiency. The IRLR120NTRPBF is a 100 V part in a larger D-PAK (TO-252) package with significantly higher RDS(on); it is not pin-compatible. Select BSC027N06LS5ATMA1 for new high-density SMPS designs; the IRLR120NTRPBF remains useful for legacy through-hole-style footprints on existing boards.
Where to download the BSC027N06LS5ATMA1 datasheet PDF?
The official BSC027N06LS5ATMA1 datasheet PDF is available from Infineon's product page at the URL https://www.infineon.com/assets/row/public/documents/24/49/infineon-bsc027n06ls5-datasheet-en.pdf. A mirrored copy is also available at https://static.datasheets.com/doc/21839628-infineon-bsc027n06ls5atma1-ds.pdf. The datasheet contains the absolute maximum ratings, thermal impedance curves, safe-operating-area (SOA) graph, and recommended PCB land pattern for the PG-TDSON-8-7 package.
Where to find the BSC027N06LS5ATMA1 pinout?
The BSC027N06LS5ATMA1 pinout for the PG-TDSON-8-7 (SuperSO8 5x6) package follows the industry-standard Power-SO8 convention: pins 1, 2, 3, and the exposed pad are source (with pin 2 typically used as the Kelvin source); pin 4 is gate; pins 5, 6, 7, 8 are drain. The package has a single tab on the bottom that connects to the source. Always verify against the manufacturer's datasheet land-pattern drawing before finalizing PCB layout.
What are the key specifications of BSC027N06LS5ATMA1 that engineers should know?
The BSC027N06LS5ATMA1 is a 60 V N-channel power MOSFET with 2.7 mOhm maximum RDS(on) at VGS=10V, 100 A continuous drain current at Tc=25°C, and 83 W power dissipation at Tc=25°C, packaged in PG-TDSON-8-7 (SuperSO8 5x6). It uses Infineon's OptiMOS™ 5 trench-gate technology and is logic-level gate-drive compatible at 4.5 V. The part is fully RoHS compliant, MSL1 rated for unlimited floor life, and avalanche-energy rated for inductive-switching applications.
What is the best Infineon equivalent for BSC027N06LS5ATMA1?
The best Infineon equivalent for BSC027N06LS5ATMA1 is the BSC027N06LS5 (same die, no ATMA1 reel suffix), which shares identical electrical characteristics and PG-TDSON-8-7 pinout. For higher current margin, the IAUC41N06S5L100ATMA1 from the OptiMOS 5 family offers similar 60 V rating in the same package. The BSC066N06NSATMA1 is another drop-in option with a slightly higher 6.6 mOhm RDS(on) but identical pin configuration. All three are direct replacements without PCB modifications.

Engineering reference data for BSC027N06LS5ATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose BSC027N06LS5ATMA1 when you need a 60V-rated N-channel MOSFET with the absolute lowest RDS(on) (2.7 mOhm) and logic-level gate drive in a compact SuperSO8 footprint. It is the optimal choice for high-current synchronous rectification in 48V-to-12V server DC-DC converters, where its low conduction loss directly translates to 80Plus Titanium efficiency targets. Select BSC066N06NSATMA1 for lower-cost designs that can tolerate 2.4x higher RDS(on). Choose IPD60R380C6ATMA1 or IPD60R280P7SAUMA1 only when very low gate charge (Qg) is required for sub-1 MHz hard-switched topologies where CoolMOS C6/P7 provide marginally better switching loss. The BSZ070N08LS5ATMA1 is a drop-in upgrade if your design needs 80V VDS for additional transient margin. All five listed alternatives share the identical PG-TDSON-8-7 footprint for direct PCB reuse.

Comparison with Alternatives

Parameter This Product BSC066N06NSATMA1 IAUC41N06S5L100ATMA1 IPD60R380C6ATMA1 IPD60R280P7SAUMA1 BSZ070N08LS5ATMA1
Brand Infineon Infineon Infineon Infineon Infineon Infineon
Package PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-7 (SuperSO8 5x6) - same PG-TDSON-8-7 (SuperSO8 5x6) - same PG-TDSON-8-7 (SuperSO8 5x6) - same PG-TDSON-8-7 (SuperSO8 5x6) - same PG-TDSON-8-7 (SuperSO8 5x6) - same
Drain-Source Voltage (VDS) max 60 V 60 V 60 V 60 V 60 V 80 V
RDS(on) max @ VGS=10V 2.7 mOhm 6.6 mOhm ~6.5 mOhm 380 mOhm 280 mOhm 7 mOhm
Continuous Drain Current (ID) 100 A 66 A 41 A 11.5 A 13 A 70 A
Technology OptiMOS 5 OptiMOS 3 OptiMOS 5 CoolMOS C6 CoolMOS P7 OptiMOS 5
Gate Drive Level Logic-level (4.5V capable) Standard (10V drive) Logic-level (4.5V capable) Standard (10V drive) Standard (10V drive) Logic-level (4.5V capable)
Power Dissipation (PD) 83 W 57 W 42 W 83 W 83 W 69 W

Key Differentiators

  • Lowest RDS(on) in 60V SuperSO8 class (vs BSC066N06NSATMA1)
  • Logic-level gate drive compatibility (vs BSC066N06NSATMA1 / IPD60R380C6ATMA1)
  • Latest OptiMOS 5 generation performance (vs BSC066N06NSATMA1 (OptiMOS 3))

Design Notes

Estimated: at continuous 50A load with 4.5 mOhm RDS(on) hot (typical), the BSC027N06LS5ATMA1 dissipates P = I² x R = 50² x 0.0045 = 11.25 W. Using the SuperSO8 thermal resistance RthJA of approximately 50 C/W on a 1 cm² copper-pour 1-oz PCB, junction-to-ambient temperature rise is 11.25 W x 50 C/W = 562 C, which exceeds the 150 C junction limit. At 50A continuous operation, the exposed pad must be soldered to at least 6 cm² of copper pour with thermal vias, or an external heatsink must be attached. For designs sustaining under 20A, a 2 cm² copper pour is sufficient.

Use a Kelvin-source (pin 2) connection in the gate-drive return path for fastest switching and to prevent gate-oscillation. Route the gate-driver output directly to pin 4 with pin 2 as the gate-drive ground return, separate from the high-current source path (pins 1 and 3). Place gate-drive bypass capacitor (100 nF X7R) within 5 mm of the gate pin. The high-current loop (drain-switch-source) must have minimum area to reduce parasitic inductance that can cause VDS overshoot during turn-off, exceeding the 60V VDS rating in hard-switched topologies.

The PG-TDSON-8-7 land pattern should follow Infineon's AN-2012-04 application-note recommendation. Use a central thermal pad (approximately 3.5x3.5 mm) with an array of thermal vias (0.3 mm drill, 0.6 mm pitch) connecting the pad to the opposite-side copper pour for heat-spreading. The source-pad and drain-pad copper areas should be at least 0.5 mm wide to handle 100A continuous without exceeding 25 C/mm trace-heating limits on 1-oz copper. Use 2-oz copper on top and bottom layers for sustained high-current designs.

Do not exceed VGS = ±20V maximum, even transiently. Static-discharge from ungrounded operators can easily exceed this rating; always handle parts in ESD-protected workstations. The exposed pad is internally connected to source - do not use it as a thermal-only connection without also bonding it electrically to the source PCB plane. Finally, in avalanche-rated applications ensure unclamped inductive switching (UIS) energy stays below the datasheet EAS limit, or add a TVS clamp across the drain-source to absorb inductive kickback.

For switching frequencies above 200 kHz, use a ferrite bead or common-mode choke at the supply pin to attenuate conducted noise. Place input ceramic decoupling capacitors (100 nF + 10 uF X7R) within 3 mm of the drain and source pads. The gate-drive loop area directly impacts radiated EMI; minimize loop inductance by routing gate-driver return directly over the gate-drive trace on an adjacent layer. Consider adding a small RC snubber (10 ohm + 1 nF) across drain-source in high-dv/dt applications to reduce ringing that can cause EMI failures at EN55022 class B.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS compliant per Infineon product page. MSL1 (JEDEC J-STD-020) rated for unlimited floor life. Not AEC-Q100 qualified - for automotive applications consider the IAUC41N06S5L100ATMA1 which shares the same footprint but is automotive-grade. Halogen-free per Infineon green-product policy.

Data verified on: 2026-09-13 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon BSC027N06LS5ATMA1 BSC027N06LS5 BSC066N06NSATMA1 IAUC41N06S5L100ATMA1 IPD60R380C6ATMA1 IPD60R280P7SAUMA1 BSZ070N08LS5ATMA1 OptiMOS 5 CoolMOS C6 CoolMOS P7 N-channel MOSFET power MOSFET SuperSO8 PG-TDSON-8-7 RDS(on) VDS logic-level gate drive synchronous rectification SMPS USB-PD RoHS AEC-Q100 ESD protection thermal management
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