BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon
MPN: BSC027N06LS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.78 | $780.00 |
| 5,000 | $0.66 | $3,300.00 |
Drop-in alternatives for BSC027N06LS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC066N06NSATMA1
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →IAUC41N06S5L100ATMA1
✅ Drop-In✓ In Stock
$0.43 / Unit
View Datasheet →IPD60R380C6ATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →IPD60R280P7SAUMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →BSZ070N08LS5ATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC027N06LS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 5 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 60 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | Logic-level |
| Continuous Drain Current (ID) at Tc=25°C | 100 A |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm |
| Power Dissipation (PD) at Tc=25°C | 83 W |
| Operating Temperature Range | -55°C to +150°C |
| Package / Case | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Avalanche Energy Rated | Yes |
| RoHS Status | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 |
BSC027N06LS5ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low-side connection) |
| Pin 2 | Kelvin Source — Kelvin source for gate-drive return, tied to pin 1 |
| Pin 3 | Source — Source terminal (low-side connection) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain terminal (high-side connection) |
| Pin 6 | Drain — Drain terminal (high-side connection) |
| Pin 7 | Drain — Drain terminal (high-side connection) |
| Pin 8 | Drain — Drain terminal (high-side connection) |
| Pin EP | Source / Thermal Pad — Exposed pad; electrically tied to source, thermally bonded to PCB copper |
Safe Operating Area (DC)
Typical Applications
BSC027N06LS5ATMA1 is suitable for 7 applications: 48V to 12V Server DC-DC Synchronous Rectification, Solar Micro-Inverter Power Optimizer, USB-PD 100W Adapter Output Stage, High-Current Hot-Swap and OR-ing Controller, Battery Management for Power Tools and E-Mobility, Industrial 24V/36V Motor Drive H-Bridge, Telecom Point-of-Load (PoL) Buck Converter.
48V to 12V Server DC-DC Synchronous Rectification
The BSC027N06LS5ATMA1 fits 48V-input step-down converters for hyperscale data centers and telecom equipment. Its 2.7 mOhm RDS(on) and 60V VDS rating give comfortable margin below the standard 48V nominal bus (allowing 60V transients), and the 100A continuous drain current supports multi-kilowatt power stages. Placed in the low-side synchronous-rectifier position of a half-bridge or full-bridge LLC topology, the device replaces Schottky diodes and cuts rectification losses by more than 50%, directly improving 80Plus Titanium-class efficiency targets.
Recommended
Solar Micro-Inverter Power Optimizer
In solar micro-inverters and module-level power optimizers (MLPE), the BSC027N06LS5ATMA1 serves as the primary switching element for high-frequency isolated topologies such as HERIC or H6. Its logic-level 4.5V gate drive allows direct control from digital isolator-driven gate drivers, while the 60V rating suits 24V/48V PV string applications. The device's low Qg enables switching frequencies above 100 kHz, shrinking magnetics and achieving power densities above 1W/cm³ in compact rooftop enclosures.
Recommended
USB-PD 100W Adapter Output Stage
The BSC027N06LS5ATMA1 is well-matched to USB-Power-Delivery (USB-PD 3.1) adapters delivering 100W (20V/5A) and extended-power-range (EPR) profiles. Its logic-level drive pairs naturally with primary-side QR controllers, and the 60V VDS handles flyback voltage spikes from 19.5V output adapters with ample design margin. In active-clamp flyback topologies, the BSC027N06LS5ATMA1 acts as the synchronous-rectifier switch, reducing conduction losses and improving thermal performance of compact wall-plug designs.
Recommended
High-Current Hot-Swap and OR-ing Controller
In 48V datacenter bus hot-swap and OR-ing applications, the BSC027N06LS5ATMA1 serves as the main pass element handling inrush current limiting and reverse-current blocking. Its 2.7 mOhm RDS(on) at 100A continuous causes only 2.7W of conduction loss in a typical 100A branch, far below the 83W power dissipation rating. The exposed SuperSO8 pad enables direct PCB heatsinking without external heatsinks, and avalanche energy rating protects against load-dump transients on the backplane.
Recommended
Battery Management for Power Tools and E-Mobility
The BSC027N06LS5ATMA1 is used in 18V-36V cordless power tools and e-bike battery protection circuits as the main discharge FET. The 60V VDS comfortably exceeds the fully-charged 42V (10S Li-ion) stack voltage with derating margin. Logic-level gate drive allows direct control from a battery management IC without charge-pump circuits, while the 2.7 mOhm RDS(on) minimizes voltage drop during high-current discharge, extending tool runtime by 3-5% versus higher-resistance alternatives.
Recommended
Industrial 24V/36V Motor Drive H-Bridge
In industrial 24V and 36V brushed-DC motor drives and small three-phase inverters, the BSC027N06LS5ATMA1 forms the switching elements of the H-bridge or inverter leg. Its 60V VDS withstands back-EMF spikes from inductive loads, and the SuperSO8 package's low thermal resistance supports continuous currents up to 30A without external heatsinking. Combined with Infineon's gate-driver ICs, it delivers compact, robust motor control for AGVs, small pumps, and fan drives.
Recommended
Telecom Point-of-Load (PoL) Buck Converter
The BSC027N06LS5ATMA1 functions as the synchronous rectifier in 12V to 1V/2.5V/3.3V point-of-load converters powering ASICs and FPGAs in telecom line cards. Its 2.7 mOhm RDS(on) and logic-level drive support multi-MHz switching frequencies when paired with advanced digital controllers, achieving current densities exceeding 60A per cm³. The PG-TDSON-8-7 footprint allows compact layout next to DrMOS and integrated power-stage solutions, while the 60V rating handles transient conditions in -48V telecom backplanes.
Recommended
Recommended Products Summary
Engineering reference data for BSC027N06LS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC066N06NSATMA1 | IAUC41N06S5L100ATMA1 | IPD60R380C6ATMA1 | IPD60R280P7SAUMA1 | BSZ070N08LS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same |
| Drain-Source Voltage (VDS) max | 60 V | 60 V | 60 V | 60 V | 60 V | 80 V |
| RDS(on) max @ VGS=10V | 2.7 mOhm | 6.6 mOhm | ~6.5 mOhm | 380 mOhm | 280 mOhm | 7 mOhm |
| Continuous Drain Current (ID) | 100 A | 66 A | 41 A | 11.5 A | 13 A | 70 A |
| Technology | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 | CoolMOS C6 | CoolMOS P7 | OptiMOS 5 |
| Gate Drive Level | Logic-level (4.5V capable) | Standard (10V drive) | Logic-level (4.5V capable) | Standard (10V drive) | Standard (10V drive) | Logic-level (4.5V capable) |
| Power Dissipation (PD) | 83 W | 57 W | 42 W | 83 W | 83 W | 69 W |
Key Differentiators
- Lowest RDS(on) in 60V SuperSO8 class (vs BSC066N06NSATMA1)
- Logic-level gate drive compatibility (vs BSC066N06NSATMA1 / IPD60R380C6ATMA1)
- Latest OptiMOS 5 generation performance (vs BSC066N06NSATMA1 (OptiMOS 3))
Design Notes
Estimated: at continuous 50A load with 4.5 mOhm RDS(on) hot (typical), the BSC027N06LS5ATMA1 dissipates P = I² x R = 50² x 0.0045 = 11.25 W. Using the SuperSO8 thermal resistance RthJA of approximately 50 C/W on a 1 cm² copper-pour 1-oz PCB, junction-to-ambient temperature rise is 11.25 W x 50 C/W = 562 C, which exceeds the 150 C junction limit. At 50A continuous operation, the exposed pad must be soldered to at least 6 cm² of copper pour with thermal vias, or an external heatsink must be attached. For designs sustaining under 20A, a 2 cm² copper pour is sufficient.
Use a Kelvin-source (pin 2) connection in the gate-drive return path for fastest switching and to prevent gate-oscillation. Route the gate-driver output directly to pin 4 with pin 2 as the gate-drive ground return, separate from the high-current source path (pins 1 and 3). Place gate-drive bypass capacitor (100 nF X7R) within 5 mm of the gate pin. The high-current loop (drain-switch-source) must have minimum area to reduce parasitic inductance that can cause VDS overshoot during turn-off, exceeding the 60V VDS rating in hard-switched topologies.
The PG-TDSON-8-7 land pattern should follow Infineon's AN-2012-04 application-note recommendation. Use a central thermal pad (approximately 3.5x3.5 mm) with an array of thermal vias (0.3 mm drill, 0.6 mm pitch) connecting the pad to the opposite-side copper pour for heat-spreading. The source-pad and drain-pad copper areas should be at least 0.5 mm wide to handle 100A continuous without exceeding 25 C/mm trace-heating limits on 1-oz copper. Use 2-oz copper on top and bottom layers for sustained high-current designs.
Do not exceed VGS = ±20V maximum, even transiently. Static-discharge from ungrounded operators can easily exceed this rating; always handle parts in ESD-protected workstations. The exposed pad is internally connected to source - do not use it as a thermal-only connection without also bonding it electrically to the source PCB plane. Finally, in avalanche-rated applications ensure unclamped inductive switching (UIS) energy stays below the datasheet EAS limit, or add a TVS clamp across the drain-source to absorb inductive kickback.
For switching frequencies above 200 kHz, use a ferrite bead or common-mode choke at the supply pin to attenuate conducted noise. Place input ceramic decoupling capacitors (100 nF + 10 uF X7R) within 3 mm of the drain and source pads. The gate-drive loop area directly impacts radiated EMI; minimize loop inductance by routing gate-driver return directly over the gate-drive trace on an adjacent layer. Consider adding a small RC snubber (10 ohm + 1 nF) across drain-source in high-dv/dt applications to reduce ringing that can cause EMI failures at EN55022 class B.
Compliance Information
RoHS compliant per Infineon product page. MSL1 (JEDEC J-STD-020) rated for unlimited floor life. Not AEC-Q100 qualified - for automotive applications consider the IAUC41N06S5L100ATMA1 which shares the same footprint but is automotive-grade. Halogen-free per Infineon green-product policy.