BSC040N08NS5ATMA1 vs BSC040N10NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC040N08NS5ATMA1 by Infineon and BSC040N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
BSC040N08NS5ATMA1 β ActiveInfineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC040N08NS5ATMA1 | BSC040N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $0.93 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC040N08NS5ATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A | β |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm | β |
| Power Dissipation (Ta=25C, 1inΒ² PCB) | 2.5 W | β |
| Power Dissipation (Tc=25C) | 104 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +175 C | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg total] |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Primary Application | Synchronous rectification in telecom and server power supplies | β |
| FET Type | β | N-Channel |
| Maximum On-Resistance (RDS(on)) | β | 4 mOhm |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) max | β | 136 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 139 W |
| Operating Temperature Range | β | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Output Capacitance Reduction | β | Up to 44% vs previous generation |
| RDS(on) Reduction | β | Up to 43% vs previous generation |
| Automotive Qualification | β | AEC-Q101 (per Infineon OptiMOS 5 family) |