BSC040N08NS5ATMA1 vs BSC040N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC040N08NS5ATMA1 dari Infineon dan BSC040N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC040N08NS5ATMA1 BSC040N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC040N08NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Maximum Drain Current (ID, Tc=25C, package-limited) 121 A —
On-Resistance (RDS(on) max, VGS=10V) 4 mOhm —
Power Dissipation (Ta=25C, 1in² PCB) 2.5 W —
Power Dissipation (Tc=25C) 104 W —
Paket PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 C to +175 C —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: Qg total]
Status RoHS Compliant Compliant
Level MSL 1 —
Primary Application Synchronous rectification in telecom and server power supplies —
FET Type — N-Channel
Maximum On-Resistance (RDS(on)) — 4 mOhm
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) max — 136 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 139 W
Rentang Suhu Kerja — -55C to +150C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Output Capacitance Reduction — Up to 44% vs previous generation
RDS(on) Reduction — Up to 43% vs previous generation
Automotive Qualification — AEC-Q101 (per Infineon OptiMOS 5 family)

Spek dan Sumber

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