BSC040N08NS5ATMA1 vs BSC040N10NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC040N08NS5ATMA1 sa pamamagitan ng Infineon at BSC040N10NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
BSC040N08NS5ATMA1 ✓ NakahandaInfineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC040N08NS5ATMA1 | BSC040N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC040N08NS5ATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A | — |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm | — |
| Power Dissipation (Ta=25C, 1in² PCB) | 2.5 W | — |
| Power Dissipation (Tc=25C) | 104 W | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg total] |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | — |
| Primary Application | Synchronous rectification in telecom and server power supplies | — |
| FET Type | — | N-Channel |
| Maximum On-Resistance (RDS(on)) | — | 4 mOhm |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) max | — | 136 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 139 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Output Capacitance Reduction | — | Up to 44% vs previous generation |
| RDS(on) Reduction | — | Up to 43% vs previous generation |
| Automotive Qualification | — | AEC-Q101 (per Infineon OptiMOS 5 family) |